tungsten/ Schottky barrier inhomogeneitiesIn this work, the Schottky barrier height (SBH) of W on n-type and p-type Si 1 x yGe xC y pseudomorphic alloys is investigated as a function of the alloy composition. Th
www.nature.com/scientificreports OPEN received: 03 February 2016 accepted: 20 May 2016 Published: 10 June 2016 Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes Ashutosh Kumar1,2, M. Heilmann3, Michael Latzel3,4, Raman Kapoor...
www.nature.com/scientificreports OPEN received: 03 February 2016 accepted: 20 May 2016 Published: 10 June 2016 Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes Ashutosh Kumar1,2, M. Heilmann3, Michael Latzel3,4, Raman Kapoor...
rGO-ZnCdS Schottky diodeBarrier inhomogeneitiesDouble Gaussian distributionIn this research work, ZnO nanostructures were synthesized by low temperature solution process and applied as photo-catalysts for the degradation of rhodamine B (RhB) dye. The synthesized ZnO nanostructures presented well-defined rod...
Barrier Inhomogeneities Dominating Low-Frequency Excess Noise of Schottky ContactsWe introduce a new quantitative description for electronic noise at Schottky contacts. The model combines spatially inhomogeneous current transport across the interface with the modulation of the local barrier height due to ...
Barrier inhomogeneities in titanium Schottky contacts formed on argon plasma etched p-type SiGedoi:10.1007/s10854-014-1763-zSCHOTTKY barrier diodesTITANIUMSILICON compoundsELECTRIC propertiesCURRENT-voltage characteristicsPLASMA etchingARGONTEMPERATURE effect...
A 14 nm transrotational NiSi layer was produced made of extremely flat pseudo-epitaxial domains (~200nm in diameter). The current-voltage (I-V) characteristics (340-80K) have indicated the presence of structural inhomogeneities which lower the Schottky barrier by △≈s 0.1 eV. They have been...
SchottkyBarrierParametersI-V-TandC-V-TMeasurementsPd/TiSchottkyContactsWe report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideal...
S. Sudarshan, “Investigation on barrier inhomogeneities in 4H-SiC Schottky rectifiers,” physica status solidi (a), vol. 203, no. 3, pp. 643–650, 2006. :Ma Xianyun, Sadagopan Priyamvada, Sudarshan Tangali S. Investigation on barrier inhomogeneities in 4H-SiC Schottky rectifiers. Phys ...
H. Cetin, E. Ayyildiz "On Barrier Height Inhomogeneities of Au and Cu/n-InP Schottky Contacts" Physica B 405, 559-563, 2010.Cetin, H. and Ayyildiz E. 2010. On Barrier Height Inhomogeneities Of Au And Cu/N-Inp Schottky Contacts.