The band-gap shift of GaN:Mg epilayers on (0001)-oriented sapphire was studied as a function of uniaxial strain compression along thec-axis using time-resolved, optical absorption measurements in shock wave experiments. For longitudinal stresses ranging from 4 to 14 GPa, the band gap shift is...
The effects of interface polarization charge on the photovoltaic characteristics of GaN/InGaN solar cells have been analyzed by Z.Q. Li et al. (pp. 928–93... Z.,Q.,Li,... - 《Physica Status Solidi:a》 被引量: 44发表: 2011年 Design, Synthesis and Properties of Low Band Gap Polyfl...
In addition to the excellent electronic properties, the wide band gap of GaN means it also forms the basis of the incredibly successful violet laser diodes (LDs) and blue and green light emitting diodes (LEDs), achieved by alloying with indium, which are found at the heart of most modern ...
The optical properties ofGaNxP1xalloys(0.007x0.031)grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears inGaNxP1xat energy below the indirectΓV–XCtransition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomo...
where, (ECL − EV)bulk is the binding energy difference between core level and valance band maxima in GaN bulk which is a material constant, Eg is the band gap of GaN (3.45 eV16), EC is the position of conduction band with respect to the Fermi level, and depends on doping...
Band-gap discontinuity in GaN_(0.02)As_(0.87)Sb_(0.11)/GaAs single-quantum wells investigated by photoreflectance spectroscopy S. Harris, "Band-gap discontinuity in GaN0.02As0.87Sb0.11 GaAs single-quantum wells investigated by photoreflectance spectroscopy", J. Appl. Phys., vol... R Kudrawiec...
The band-gap shift (BGS) of Si-doped GaN has also been investigated above the MNM transition where this shift is observed. Theoretical and experimental results have a rough agreement in a range of impurity concentration of interest. 展开 ...
It is shown that, in the model of the ideal quantum well in which there is no tail of localized gap states, it is impossible to account for the large blue shift. A phenomenological expression is suggested for the density of states. The expression involves the adjustable parameter, namely, ...
Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x We report strong band gap photoluminescence at room temperature in dilute quaternary GaNxAs1-x-yBiy alloys (x1-yIn S.,Tixier,S.,... - 《Applied Physics Letters》 被引量: 23发表: 2005年 Magnetic ...
The optical band gap in 40 nmGa1xInxN/GaNsingle heterostructures is investigated in the composition range0<x<0.2by photoreflection spectroscopy (PR) at room temperature and compared with photoluminescence (PL) data. Clear PR oscillations at the GaInN band gap are observed as originating in the la...