Synthesis, characterization and optical band gap of NiO nanoparticles derived from anthranilic acid precursors via a thermal decomposition route[J] . Nasser Mohammed Hosny.Polyhedron . 2010 (3)Hosny, N. M. Synthesis, characterization and optical band gap of NiO nanoparticles derived from anthranilic ...
The 200nm thin NiO showed an average optical energy band gap of 3.4eV, and increase with doping at 6% Lu2O3. The Hall Effect measurements confirmed that holes were predominant charges in the conduction process (i.e p-type). D.C conductivity measurements with temp-erat...
Band gap in NiO: A cluster study The Mott-Hubbard gap U and the charge-transfer gap Δ of solid NiO are estimated from ab initio calculations on the NiOcluster. Covalency in the essentiall... GJM Janssen,WC Nieuwpoort - 《Physical Review B Condensed Matter》 被引量: 237发表: 1988年 Mec...
Finite element based simulation studies revealed strong enhancement of the electric field in the NiO nanostep samples and the simulated results were compared with the experimental outcome. The photocatalytic activities of the as-prepared samples were also investigated, which showed that Ni-NiO nanosteps...
Using sonochemical waves resulted in lowering of the size of the nickel oxide crystallites. FT-IR spectroscopy and X-ray diffraction revealed high purity well-crystallized structure of the synthesized powder. Photoluminescence spectroscopy confirmed production of a wide band-gap structure. 展开 ...
The band alignment of Al2O3/n-Ga2O3was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8±0.2eV measured for Al2O3, the conduction and valence band offsets at the interface were estimated to be 1.5±0.2eV and 0.7±0.2eV, respectively. The conduction band ...
Thin films of nickel-doped zinc oxide (Zn1-NiO) show redshift in the optical band gap and in the near band edge (NBE) emission of the photoluminescence spectra. The Zn1-NiO thin films obtained by sol-gel spin coating method show narrowing of the band gap from 3.23 to 3.00 eV as the...
band gap + 添加翻译 英文-西班牙文字典 Banda prohibida energy range in a solid where no electron states can exist; energy difference (in electron volts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors Because, you know, we were ...
It is known that the PBE functional underestimates the band gap of silicon. To obtain the electronic band structure with correct gap, other method and functional are used for silicon, e.g., the many-body perturbation theory based on the GW approximation31,32 and the hybrid functional proposed...
The simulation indicates that Ni vacancies in bulk NiO induce the gap states and result in shallower valence band. This is consistent with the UPS results above. View Download Figure 2 (a) Atomic model and (b) the total DOS of NiO, (c) atomic model and (d) the total DOS of NiO ...