美 英 un.带边吸收 英汉 un. 1. 带边吸收
1) band edge absorption 带边吸收<光> 2) band-edge of optical absorption 吸收带边 1. UV-VIS absorption spectrum and its derivative of absorption spectrum were used to detemine the shift ofband-edge of optical absorptionand band gap value along with the variation of temperature. ...
Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers[J] . V. Grivickas,J. Linnros,P. Grivickas,A. Galeckas.Materials Science & Engineering B . 1999V. Grivickas, et al, "Band edge absorption carrier recombination and transport measurements in 4H-SiC ...
各位虫友,我在一篇关于CdSeS/ZnS量子点的文献里面,发现一句话,根据紫外吸收和荧光发射谱图可以得到band-edge absorption energy,请问这个数据是通过仪器测量出来的还是可以有公式可以直接通过谱图计算的? 具体原文摘录如下:The band-edge absorption energy of CdSeS QDs IS 2.25 eV. (Figure 1b). Figure 1b:...
With the increasing deposition amount of Cu, theabsorption band- edge red - shifts. 根据雷利散射引起的消光增强解释了组装体吸收带边红移的原因. 互联网 The suitable ultravioletabsorption bandis selected via experiment. 通过实验研究选定检测紫外吸收波长. ...
Synthesis of CdSXSe1-X nanoribbons with uniform and controllable compositions via sulfurization: Optical and electronic properties studies Ternary CdSXSe1−X single-crystal nanoribbons (NRs) with uniform and controllable compositions (0 < X < 1) were synthesized for the first time via sulfur......
While ground-state optical absorption with light polarized parallel or perpendicular to thec-axis has been carried out15,28,29,30,31,32, very little is known about carrier dynamics or higher lying states. The ground-state band-edge absorption anisotropy is explained by the symmetry properties of...
we report a strong coupling of a single phonon mode at the frequency of ~ 1 THz to the optical band gap by monitoring the transient band edge absorption after ultrafast resonant THz phonon excitation. Excitation of the 1 THz phonon causes a blue shift of the band gap over the temper...
The band edge position plays a decisive role in the photon absorption and induced charge carrier transfer [95]. The suitable band structure is the prerequisite for obtaining good catalytic activity. Traditional semiconductor metal oxides such as TiO2, SnO2, and ZnO, cannot fully absorb solar energy...
athe absorption edge first shifts to longer wavelengths, then to shorter ones. The band gap is nearly constant, at 3.27 eV 吸收端首先转移到更长的波长,然后到更短那些。 带隙是几乎恒定的,在3.27 eV[translate]