必应词典为您提供back-end-of-line的释义,网络释义: 后道工序;后段制程;低介电常数材料在后端工序;
从寄生电阻和电容、电迁移两方面说明后道工艺中(Back-End-Of-Line,BEOL)采用铜(Cu)互连和低介电常数(low-k)材料的必要性。相关知识点: 试题来源: 解析 寄生电阻和寄生电容造成的延迟。电子在导电过程中会撞击导体中的离子,将动量转移给离子从而推动离子发生缓慢移动。该现象称为电迁移。在导电过程中,电迁移不...
Explore the toolbox that imec’s researchers are compiling for optimizing the complex wiring schemes that connect the various components of a chip.
The IC further includes a metal-insulator-metal (MIM) capacitor on the tapered sidewalls and the base of the trench in the BEOL layer. The MIM capacitor includes a first conductive layer to line the tapered sidewalls and the base of the trench. The MIM capacitor also includes a dielectric...
与之相对应的是后道(backend of line,BEOL)工艺,后道实际上就是建立若干层的导电金属线,不同层金属线之间由柱状金属相连。目前大多选用Cu作为导电金属,因此后道又被称为Cu互联(interconnect)。这些铜线负责把衬底上的晶体管按设计的要求连接起来,实现特定的功能。图1是一个逻辑器件的剖面示意图。新的集成技术在...
在集成电路制造中,前道工艺(FEOL, Front End of Line)和后道工艺(BEOL, Back End of Line)是两个密切相关、但工艺内容和目标完全不同的阶段。要理解它们的区别,可以将整个半导体制造过程比喻为建造一座智能大厦:前道工艺相当于“建设基础与结构框架”,而后道工艺则是“完成内部连线与功能集成”。
The back-end-of-line process technology is based on Spacer definition of sub-100nm lateral gaps, and uses Aluminum as interconnect material for compatibility with advanced CMOS backend. Reported data are organized around transmission, temperature and stability characteristics, as well as scanning-AFM ...
Back end of line The back end of line(BEOL)is the second portion of IC fabrication where the individual devices(transistors,ca-pacitors,resistors,etc.)get interconnected with wiring on the wafer.[1]BEOL generally begins when thefirst layer of metal is deposited on the wafer.BEOL includes ...
Here we present back-end-of-line-compatible FE-FETs using two-dimensional MoS2 channels and AlScN ferroelectric materials, all grown via wafer-scalable processes. A large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios greater than 107 and ON-current density greater ...
Back-end-of-line (BEOL) wiring structures that include a passive element, such as a thin film resistor or a metal-insulator-metal capacitor, and multiple-height vias in a metallization level, as well as design structures for a radiofrequency integrated circuit. The wiring structures generally in...