从寄生电阻和电容、电迁移两方面说明后道工艺中(Back-End-Of-Line,BEOL)采用铜(Cu)互连和低介电常数(low-k)材料的必要性。相关知识点: 试题来源: 解析 寄生电阻和寄生电容造成的延迟。电子在导电过程中会撞击导体中的离子,将动量转移给离子从而推动离子发生缓慢移动。该现象称为电迁移。在导电过程中,电迁移不...
[3]这部分工艺流程是为了在Si衬底上实现N型和P型场效应晶体管,又被称为前道(front end of line,FEOL)工艺。与之相对应的是后道(backend of line,BEOL)工艺,后道实际上就是建立若干层的导电金属线,不同层金属线之间由柱状金属相连。目前大多选用Cu作为导电金属,因此后道又被称为Cu互联(interconnect)。这些...
Back-end-of-line (BEOL) cleaning typically refers to the removal of residues generated during the gas phase (plasma) etching of dielectric and metal films and, in certain cases, the remaining photoresist. In BEOL cleaning, the presence of metal layers precludes the use of aggressive chemicals ...
【论述题】从寄生电阻和电容、电迁移两方面说明后道工艺中(Back-End-Of-Line,BEOL)采用铜(Cu)互连和低介电常数(low-k)材料的必要性。 答案:寄生电阻和寄生电容造成的延迟。电子在导电过程中会撞击导体中的离子,将动量转移给离子从而推动离子发生缓慢移动。该现象称为电... 点击查看完整答案 你可能感兴趣的试题...
随着半导体技术的发展,超大规模集成电路芯片的集成度已经高达几亿乃至几十亿个器件的规模,两层以上的多层金属互连技术广泛使用。传统的金属互连是由铝金属制成的,但随着集成电路芯片中器件特征尺寸的不断减小,金属互连线中的电流密度不断增大,要求的响应时间不断减小,传统铝互连线已经不能满足要求,工艺尺寸小于130nm以...
Back End of the Line (BEOL) Interconnect SchemeThe present disclosure relates to a method of forming a back-end-of-the-line metal interconnect layer. The method is performed by depositing one or more self-assembled monolayers on a semiconductor substrate to define a metal interconnect layer ...
The company said the Supremas will be used in front-end-of-line (FEOL), mid-of-line (MoL) and back-end-of-line (BEOL) strip applications for high-volume production at the 3Xnm technology nodes and advanced device development at the 2Xnm nodes.The systems have begun shipment in Q3 2010...
Back-end-of-line (BEOL) cleaning typically refers to the removal of residues generated during the gas phase (plasma) etching of dielectric and metal films and, in certain cases, the remaining photoresist. In BEOL cleaning, the presence of metal layers precludes the use of aggressive chemicals ...
The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature ...
专利名称：Chip package interaction (CPI) back-end-of- line (BEOL) monitoring structure and method 发明人：Scott K. Pozder,Eng Chye Chua 申请号：US15657312 申请日：20170724 公开号：US10643912B2 公开日：20200505 专利内容由知识产权出版社提供 专利附图：摘要：Various embodiments include monitoring ...