CdO-Ga2O3 alloy films (Cd1-xGaxO1+未) over the whole composition range (x=0 to 1) were synthesized by room temperature radio frequency magnetron sputtering. We found that the intrinsic band gap of these alloys can be tuned in a wide range from 2.2 to 4.8 eV. As the Ga content ...
The potential of effectivelyn-type doping Ga2O3considering its large band gap has made it an attractive target for integration into transistors and solar cells. As a result amorphous GaOxis now attracting interest as an electron transport layer in solar cells despite little information on its opto...
Monoclinic gallium-oxide (β-Ga2O3) nanowires (NWs) have potential applications in ultraviolet optoelectronic devices and high-temperature gas sensors by virtue of their unique and outstanding properties, such as a wide bandgap of 4.9eV and excellent thermal stability [1], [2], [3], [4]. Se...
BandgapGallium oxideOptical constantsPolycrystalline filmSpectroscopic ellipsometryThickness? 2022 Elsevier B.V.Amorphous/polycrystalline Ga2O3 is attracting considerable attention because its low cost and convenience of use make it a promising material for applications of solar blind ultraviolet detectors and ...
In optical properties, the crystalline Ga2O3 represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga2O3 can be obtained by adjusting the rapid thermal annealing temperatures, and ...
gallium oxide (Ga₂O₃)in dopingIn this study, we report high-performance amorphous Ga2O3 metal-oxide (AMO) thin film transistor (TFT) using an low-temperature solution-process coupling with In alloy engineering. In doping can lower the activation temperature of gallium oxide and increase ...
Its oxide, gallium oxide (Ga2O3), combines a large bandgap (4.4–5.3 eV) with a high dielectric constant (≈10). Despite the technological potential of both materials, controlled oxidation of atomically‐thin β‐GaS remains under‐explored. This study focuses on the controll...
Gallium Oxide (Ga2O3) for solar-blind photodetectors (PDs) has drawing increasing research interest in recent years because of its natural wide bandgap. However, the traditional material growth methods are always complicated and the corresponding PD performance is also not good enough. In this work...
The temperature dependent of the dc-current passes through Au/Ga2O3:W/Si arrangement predicts the red shift of the bandgap due to W doping.doi:10.1016/j.microrel.2011.12.033A.A. DakhelElsevier LtdMicroelectronics ReliabilityDakhel, A. A., W doping effect on the dielectric properties of ...
Here, a nonequilibrium growth method is reported to fabricate amorphous MgGaO (a‐MgGaO) films with an ultrawide bandgap of 6.0 eV and an ultrashort absorption edge of 206 nm by alloying MgO and Ga2O3. By combining the as‐grown films with p‐type graphene (p‐Gr) which serves as a ...