For MIS type GaN power transistors, the issue was that a hysteresis attributed to electron traps within the gate insulator was often observed in the drain current characteristics resulting in a variation of the threshold voltage. Panasonic develops Insulated-Gate GaN power transistor When the drain ...
range (e.g., 550 nm) owing to its long effective carrier lifetime (typically 10 times larger than that of Si, and [10.sup.5] times that of GaAs), while still offering excellent electron and hole mobilities (roughly of the same order of magnitude as that of the other two materials)....