doi:10.1016/0039-6028(68)90021-6Huff, H. RKawaji, SGatos, H. CElsevier B.V.Surface ScienceH. Huff, S. Kawaji, and H. C. Gatos, Electronic configuration of indium antimonide surfaces, Surf. Sci. 10, 232–238 (1968).
Be sure to include important oxidation states, the electron configuration, and how the d-electrons are involved. How can you include Explain why copper possesses a high electrical conductivity. Briefly explain why aluminum, gallium & indium form ha...
InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm ar... XK Li,P Jin,DC Liang,... -...
Quantum coupling in arrayed nanostructures can produce novel mesoscale properties such as electronic minibands to improve the performance of optoelectronic devices, including ultra-efficient solar cells and infrared photodetectors. Colloidal PbSe quantum
Complete active space multi-configuration self-consistent field (CASSCF) followed by multi-reference singles+doubles configuration interaction (MRSDCI) computations are carried out on the low-lying electronic states of Ga 3 P and GaP 3. The ground states of Ga 3 P and GaP 3 are found to be ...
Here, the roughness is in few nm, so a little bit of change in the roughness would have very limited impact on the propagation of SAW. Electrical properties. Hall measurement was carried out for the thin films in van der Pauw configuration at room temperature. The conductivity is reduced...
Thus, since IFO and BFO share the same crystal structure (R3c, space group 161), magnetic configuration (G-type AFM) and ferroelectric characteristics (along the c-axis and with Ps ∼ 90 µC/cm2), it is reasonable to suppose that a similar value of Ueff should be applied to give ...
We realized an electrode configuration using electro-plated metallization layers and achieved a bandwidth of 50 GHz (6.4 dB electrical corresponding to 3 dB optical) suitable for the operation of optoelectronic devices up to 100 Gb/s.关键词: III-V semiconductors Mach-Zehnder interferometers electro-...
A similar two-valence band configuration can be seen in the low-temperature rhombohedral phase (α). The most distinguishing feature for α-GeTe is the switch in energy levels between the L and Σ bands, as displayed in Figure 2a, meaning a higher energy of the Σ band than that of the...
Conductive particles contained in adhesive films of the invention may be randomly dispersed therein or may be arranged in a uniform array of desired configuration. To economize the use of electrically conductive particles, the particles may be located only in segments of the adhesive film which are...