Mott insulator of strongly interacting two-dimensional semiconductor excitons Article 16 December 2021 Introduction Electron–hole doping asymmetry in Mott insulators has been one of the key questions related to the origin of superconductivity in the proximity of the insulating state1,2,3. To investi...
A stack consisting of polysilicon/TiN (gate electrode), HfO2 (high-k dielectric), and SiO2 (interface layer) forms the frontgate (FG). At the source and drain contacts Ni is intruded by a rapid thermal annealing process to form metallic NiSix/semiconductor junctions directly within the channel...
An N-type semiconductor carries current mainly in the form of negatively charged electrons similar to the conduction of current in a wire. A P-type semiconductor carries current predominantly as electron deficiencies called holes. A hole has a positive electric charge, equal and opposite to the ch...
The p-type semiconductor, which is positively charged, carries current aselectrondeficiencies calledholes. A hole has a positive charge that is equal to and opposite an electron charge. The electrons flow in a direction opposite the holes. The n-type semiconductor is negatively charged. In this ...
The invention relates to an electronic device having a semiconductor chip and a leadframe. The leadframe has a flat conductor frame. A semiconductor chip connection plate is configured in the center of the flat conductor frame. The semiconductor chip connection plate is structured by elongate ...
[4] U. Schwarzer et al., “System Benefits for Solar Inverter using SiC Semiconductor Modules”, PCIM 2014 [5] T. Bruckner et al., “The active NPC converter and its loss-balancing control,” IEEE Trans. Ind. Electron, 2005 [6] D. Floricau et al., “The efficiency of three-level...
Space-charge region in the seminconductor is also known as depletion layer. It is a layer in a doped semiconductor where the charges are diffused...Become a member and unlock all Study Answers Start today. Try it now Create an accou...
Here,κ300is the thermal conductivity at 300 K, whilenref,σκ, andβκare constants to be determined by fitting experimental measurements. In the intrinsic range, both electrons and holes contribute towardκ, constituting a bipolar contribution towardsκ. The heavier ann-type semiconductor is dope...
The major outcome of this work is the observation that an H atom scattering from a semiconductor may experience one or the other of two types of interaction, either a mechanical interaction well described within the BOA or a strong non-adiabatic interaction capable of promoting an electron to en...
Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material’s properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced curre...