bound electron-hole pairThe spectral dependence of the absorption coefficient, activation energy of photogeneration and current carrier photogeneration efficiency on the concentration of electron acceptors in th
a–c∣Andreev reflection at a normal-metal–superconductor (NS) junction is the retro-reflection of an electron into a hole (or vice versa) of opposite spin and velocity, with the addition (or removal) of a Cooper pair to the superconducting condensate. In contrast, normal (specular) reflect...
Therefore, the energy of strong exciton absorption peak, which emerges at the position of the highest DOS, is higher than that of PL peak resulted from the electron-hole pair recombination near the band gap. However, this unusual character of large DOS at VBM mainly stems from a Mexican-hat...
The second setup, referred to as Device B hereafter (see Fig. 1b), is formed by a QD coupled to two topological superconductors and one normal metal lead. In either setup, the electron Hamiltonian can be cast in the following form H HQ D(t ) + HN + HT(1S) + HT(2S) + HC,N ...
An inversion of the asymmetry in the YSR peak intensities is clearly visible, when the electron and hole excitation components switch sides across the QPT. However, it is not possible to judge from the tunneling spectra alone, on which side of the QPT the system is. Turning on a magnetic ...
From theoretical model to experimental realization, the bound state in the continuum (BIC) is an emerging area of research interest in the last decade. In the initial years, well-established theoretical frameworks explained the underlying physics for opt
An inversion of the asymmetry in the YSR peak intensities is clearly visible, when the electron and hole excitation components switch sides across the QPT. However, it is not possible to judge from the tunneling spectra alone, on which side of the QPT the system is. Turning on a magnetic ...
A solid state, electronic, optical transition device includes a multiple-layer structure of semiconductor material which supports substantially ballistic electron/hole transport at energies above/below the conduction/valance band edge. The multiple layer structure of semiconductor material includes a Fabry-Pe...
Spin transitions of a bound electron in a semimagnetic semiconductorRubo, Y. GKhazan, L. SSheka, V. IMozdor, E V
Gracheva, M., et al., (2002) “Simulation of the Electric Response of DNA Translocation through a Semiconductor Nanopore-Capacitor,” Nanotechnology 17:622-633. Guo, L. (2004) “Recent Progress in Nanoimprint Technology and its Application,” J. Phys. D: Appl. Phys 37:R123-R141 (Appendi...