Gallium arsenide (GaAs) is a compound semiconductor with a band gap of 1.43 eV, which is larger than that of silicon. GaAs has a higher electron mobility than silicon, allowing for faster response times and higher-frequency operation. This makes GaAs an ideal material for high...
P-type semiconductors are extrinsic semiconductors that have more holes than electrons, and are made by doping an intrinsic semiconductor with impurities like boron, indium or aluminum. In “p-type,” the “p” stands for “positive,” as the semiconductor has a majority of positively-charged ...
A semiconductor device comprises a transistor (3) with a high breakdown voltage semiconductor layer (4). The semiconductor layer (4) has a section elements... N Akagi,A Yamada 被引量: 0发表: 2008年 SEMICONDUCTOR COMPONENT WITH HIGH BREAKDOWN VOLTAGE A semiconductor device comprises a transistor...
Nitrogen-vacancy (NV) centers in diamond can be used as quantum sensors to image the magnetic field with nanoscale resolution. However, nanoscale electric-field mapping has not been achieved so far because of the relatively weak coupling strength between
An image of the generated flow is shown in Fig. 1a. When the input pump energy is gradually increased, the emission intensity has shown a linear rise up to a pump energy of ~ 130 μJ and thereafter, a dramatic rise indicating the onset of amplified spontaneous emission (ASE), as ...
This article discusses the role of the depletion region in a semiconductor p-n junction and the effects of doping concentration on the depletion width.
His fields of research are semiconductor physics and simulation of nanoscale devices including SOI MOSFETS, TFET, and Graphene FETs. He has published several indexed journal papers. Daryoosh Dideban is currently an Associate professor of Nanoelectronics at department of Electrical and Computer Engineering...
Intrinsic Semiconductor Intrinsic conduction is conduction in a pure semiconductor. Extrinsic Semiconductors p-type n-type Pb Extrinsic conduction is conduction in a doped semiconductor. Electrons are the majority charge carriers. Holes are the majority charge carriers. ...
Laser tapering of the fibre has been used to form high quality nanowires of noble metals21, antici- pating some of the more recent work on post processing of semiconductor core fibres. Beyond the challenges inherent in the MCD method4, the importance of crystalline order, the reactive nature ...
·h−1) under 14.4 sun irradiation20. The photothermal catalysts composed of noble metals and oxides were usually synthesized via a multi-step process21. In addition to noble metal nanostructures, some semiconductor nanostructures also exhibit LSPR in visible-NIR regions. The adaptable surface of ...