CdGa 2O 4 is a low resistivity, medium mobility n-type semiconductor when oxygen-deficient and doped with Indium. From photoelectrochemical measurements the optical bandgap is determined to be 3.07 eV, indirect allowed; a further direct allowed transition is at 4.05 eV. The electron affinity is ...
The electron affinity of semiconductor absorber and the non-local tunneling mass are considered as the main fitting parameters for correlating the simulated dark I–V curve from experimental one. The plasmon-induced hot carriers are modeled as the photogenerated electron–hole pairs in above metallic-...
13. V .W. Aebi, K.A. Costello, J.P . Edgecumbe, J.J. Boyle, W.L. Robbins, R. Bell, D. Burt, A. Harris, I. Palmer, P . Pool, Gallium arsenide electron bombarded CCD technology, Image Intensifiers and Applications; and Characteristics and Consequences of Space Debris and Near-Eart...
The electron affinity in a semiconductor is defined as the energy difference between the bottom of the conduction band and the “vacuum level” (the minimum energy of an electron in vacuum). From: Characterization of Semiconductor Heterostructures and Nanostructures, 2008 ...
What is electron affinity with the physical state of an ion for S-, Mg2+, and titanium? What is electron affinity in a semiconductor? Which has the more negative electron affinity, the chlorine atom or the Cl^- ion? What's the relationship between ionization energy and electron affinity?
A tight-binding theory of the electron affinity of semiconductor surfaces is developed, to describe the electron affinity of diamond, non-crystalline carbon, and the effects of various surface terminations such as H and O. The affinity and work function of semiconductors can be calculated from atom...
The electron affinity of pentacene thin films has been evaluated during the last decades, but it is still under controversial due to varieties of film quality and radiation damages of the films introduced during inverse photoemission spectroscopy (IPES) experiment together with insufficient energy resolut...
For an ideal Schottky contact, the Schottky barrier height is expected to be WB 5 Wm 2 x, where Wm is the work function of the metal and x is the electron affinity of the semiconductor (n-type)20. In the Schottky diode, the VOC is linearly proportional to the Schottky SCIENTIFIC ...
It has been demonstrated that a deep LUMO is required for n-type electron transport semiconductors to prevent oxidation of the negatively charged polaron in the presence of oxygen42. This corresponds to an electron affinity of about 4.2 eV at standard pressures and concentrations. Our polymer des...
Electron microscopy for rapid diagnosis of infectious agents in emergent situations (1). (Synopses) For the past half century, the limit of one electron per solar photon seemed a regrettable fact of semiconductor physics. Quantum-dot leap: tapping tiny crystals' inexplicable light-harvesting talent ...