并以“低位错密度 8 英寸导电型碳化硅单晶衬底制备(Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density)”为题在《无机材料学报》发表(DOI: 10.15541/jim20230325)。 8英寸导电型4H-SiC衬底 8英寸导电型4H-SiC单晶衬底的螺位错和基平面位错密度及其分布 为制备的 8 英寸...
the current 8 inch SiC wafer preparation and epitaxial application research has solved the problem from scratch, looking forward to the future research direction, the next focus of work will be to continue to optimize, improve efficiency and reduce costs in mass production....
根据QYR(恒州博智)的统计及预测,2023年全球8英寸碳化硅底衬市场销售额达到了0.18亿美元,预计2030年将达到18.88亿美元,年复合增长率(CAGR)为88.9%(2024-2030)。 全球8英寸碳化硅底衬(8-inch SiC Substrate)核心厂商包括II-VI Advanced Materials、ST (Norstel)、Wolfspeed、Semisic和JSG等,前三大厂商占有全球大约88...
针对未来几年8英寸碳化硅底衬的发展前景预测,本文预测到2030年,主要包括全球和主要地区销量、收入的预测,分类销量和收入的预测,以及主要应用8英寸碳化硅底衬的销量和收入预测等。 全球8英寸碳化硅底衬(8-inch SiC Substrate)核心厂商包括II-VI Advanced Materials、ST (Norstel)、Wolfspeed、Semisic和JSG等,前三大厂商...
全球8英寸碳化硅底衬(8-inch SiC Substrate)核心厂商包括II-VI Advanced Materials、ST (Norstel)、Wolfspeed、Semisic和JSG等,前三大厂商占有全球大约88%的份额。 北美是全球最大的市场,占有接近43%的市场份额。 从产品类型方面来看,导电型占有主要地位,占有85%的份额。同时就应用来说,功率器件是最大的应用领域,占...
An 8 inch n-type SiC single crystal substrate of an embodiment has a diameter in the range of 195 to 205 mm, a thickness in the range of 300 μm to 650 μm, thicknesses of work-affected layers on both the front and back sides are 0.1 nm or less, and the dopant concentration is...
[8] YANG X L, CHEN X F, XIE X J, et al. Growth of 8 inch conductivity type 4H-SiC single crystals. Journal of Synthetic Crystals, 2022,51(9):1745. [9] LOU Y F, GONG T C, ZHANG W, et al. Fabrication and characterizations of 8-Inch n type 4H-SiC single crystal substrate. ...
In September 2022, US wide-bandgap semiconductors supplier Wolfspeed announced a $1.3 billion investment to build the world's largest SiC substrate plant in North Carolina. The facility will specialize in producing 8-inch SiC substrates to meet the increasing demand for SiC-based applications.Curren...
8-inch Substrate Mass Production in 2H22, 3rd Gen Power Semiconductor CAGR to Reach 48% by 2025, Says TrendForce At present, the materials with the most development potential are Wide Band Gap (WBG) semiconductors with high power and high frequency characteristics, including silicon carbide (SiC...
8-inch Substrate Mass Production in 2H22, 3rd Gen Power Semiconductor CAGR to Reach 48% by 2025, Says TrendForce At present, the materials with the most development potential are Wide Band Gap (WBG) semiconductors with high power and high frequency characteristics, including silicon carbide (SiC...