在近日召开的第70届国际电子器件会议(IEDM)上,浙江驰拓科技的最新研究成果成为了全场关注的焦点。这家公司在自旋轨道矩磁性随机存取存储器(SOT-MRAM)领域取得了突破性的进展,成功解决了困扰该技术大规模生产的重大瓶颈。 凭借独创的无轨道垂直型SOT-MRAM结构,驰拓科技不仅简化了器件的制造流程,还显著提升了产品的良率。
HIGH SPEED, LOW POWER SPIN-ORBIT TORQUE (SOT) ASSISTED SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STT-MRAM) BIT CELL ARRAYA magnetic random access memory (MRAM) array including several bit cells is described. Each of the bit cells may include a perpendicular magnetic tunnel junction (...
在近日召开的第70届国际电子器件会议(IEDM)上,浙江驰拓科技的最新研究成果成为了全场关注的焦点。这家公司在自旋轨道矩磁性随机存取存储器(SOT-MRAM)领域取得了突破性的进展,成功解决了困扰该技术大规模生产的重大瓶颈。 凭借独创的无轨道垂直型SOT-MRAM结构,驰拓科技不仅简化了器件的制造流程,还显著提升了产品的良率。
International Journal of Molecular Sciences Article Ruthenium Complexes Induce HepG2 Human Hepatocellular Carcinoma Cell Apoptosis and Inhibit Cell Migration and Invasion through Regulation of the Nrf2 Pathway Yiyu Lu, Ting Shen, Hua Yang and Weiguang Gu * Department of Oncology, Nanhai Hospital of ...
This was directly proven by the fluorescence polarization experiments, where both of the the metal complexes were bound with the G-quadruplex via the terminal π–π stacking, whereas for the I-motif DNA, only the non-specific binding was formed by electrostatic and hydrophobic interactions. ...
while the second sequence (142 residues, NCBI genomic sequence entry XP_007894766.1) appears to be incomplete and possibly a concatenation of the 30 residue N-terminal sequence of a VKORC1 ortholog together with a C-terminal 112 residue sequence that is identical to that of the putative VKORC...