Electrical, electro-optic, temperature, and aging characteristics of green-emitting Zn2GeO4:Mn alternating-current thin-film electroluminescent (ACTFEL) devices are presented. The Zn2GeO4:Mn phosphor layers are prepared by RF sputtering. A maximum luminous efficiency of and luminance of at and ...
判断正误 ((1))元素(Mn)与中,第一电离能较大的是(Mn)。( ) ((2))光催化还原(CO_2)制备(CH_4)反应中,带状纳米(Zn_2GeO_4)是该反应
flowerlikehierarchicalZn2GeO4andMn-dopedZn2GeO4microstructureshave beenpreparedbyafacilehydrothermalapproach.X-Raydifraetion(XRD),fieldemissionscanningelectronmicro- scopy(FESEM),transmissionelectronmicroscopy(TEM)andphotoluminescence(PL)spectrometrywereemployedto characterizethesamples.Suchflowerlikehierarchica1Zn,GeOd...
Li2Zn1-xGeO4:xMn2+ (x = 0, 0.0025, 0.005, 0.01, 0.015, 0.02) phosphors are prepared by solid state reactions of stoichiometric mixtures of Li2CO3, ZnO, MnCO3, and GeO2 (alumina crucibles, 1200 °C, 4 h).doi:10.1039/c3ra47760fYahong Jin...
(2)(2016·全国卷Ⅰ)光催化还原CO2制备CH4反应中,带状纳米Zn2GeO4是该反应的良好催化剂.Zn、Ge、O电负性由大到小的顺序是___。 (3)(2016·全国卷Ⅲ)根据元素周期律,原子半径Ga___As,第一电离能Ga___As(填“大于”或“小于"). (4)(2016·全国卷Ⅱ)元素...
(3+)共掺杂Zn_(2)GeO_(4)晶体结构模型.研究结果表明,Mn^(2+)掺杂使Zn_(2)GeO_(4)晶体结构更加稳定,同时会引起晶体中的电荷离域化,从而使Mn^(2+)离子成为发光中心;Eu离子在Zn_(2)GeO_(4)晶体以+3价存在,成为陷阱中心.在此基础上,我们构建了Mn^(2+)/Eu^(3+)共掺杂Zn_(2)GeO_(4)晶体长余...
Well Shaped Mn3O4 Nano-octahedra with Anomalous Magnetic Behavior and Enhanced Photodecomposition Properties Very uniform and well shaped Mn3O4 nano-octahedra are synthesized using a simple hydrothermal method under the help of polyethylene glycol (PEG200) as a re... Y Li,H Tan,XY Yang,......
样品中位于533 nm的绿色荧光源于Mn^2+的^4T1(^4G)→^6A1(^6S)跃迁.随着Mg离子浓度的增加,(Zn1-x,Mgx)2GeO4:Mn^2+样品的激发光谱出现了蓝移现象,说明Mg离子进入到Zn2GeO4晶格中对其晶格结构产生了影响,导致(Zn1-x,Mgx)2GeO4的带宽发生改变.发射光谱则表明Mg离子进入Zn2GeO4晶格引起Mn^2+的^4T1(^...
A new electroluminescent phosphor, Zn2GeO4Mn2++SiC whiskers, is proposed.A procedure is described to fabricate a solid sample of this composite material.Under an AC voltage, green light is emitted only in samples containing the SiC whiskers.A brightness of 25Cd/m2and efficiency of 0.25Lm/W ...
As it was found, the two mechanisms of electroluminescence (EL) excitation are characteristic for Zn_2GeO_4:Mn thin film electroluminescent structures: direct impact excitation of Mn~(2+) ions by field-heated electrons and by field-ionized sensitizer defect, which after the nonradiative ...