The invention adopts a novel preferable symmetrical 2T-string NOR flash cell. Each NAND or NAND like cell of this 2T-string NOR cell is to store 2 bits and is preferable to be made of N-channel device. The cell is preferable to use Fowler-Nordheim Tunneling scheme for both erase and ...
The invention adopts a novel preferable symmetrical 2T-string NOR flash cell. Each NAND or NAND like cell of this 2T-string NOR cell is to store 2 bits and is preferable to be made of N-channel device. The cell is preferable to use Fowler-Nordheim Tunneling scheme for both erase and ...