Distributed model of a typical three-dimensional VLSI interconnect structure. The capacitance of a wire is a typical component in nearly all interconnect models. The inclusion of resistive and inductive parameters in the modeling of interconnects is a recent trend. The scaling of devices reduces the...
Therefore, a system and method that could offer accurate modelling of bondwire interconnects in a short amount of time, and produce models that can easily be co-simulated with integrated circuit netlists, would be of great benefit to IC designers over the prior art....
Eugenio Culurciello, et al., “Capacitive inter-chip data and power transfer for 3-D VLSI” IEEE Trans. Circuits Syst. II, vol. 53, No. 12, pp. 1348-1352, 2006. Geoffrey Marcus, et al., “A Monolithic Isolation Amplifier in silicon-on-isolator CMOS: Testing and Applications”, Analo...
Looking ahead, several key areas offer opportunities for progress and innovation in this field: (1) The development of advanced modeling and simulation techniques can aid in the optimization of the cutting process. By utilizing computational models, the complex interrelationships among the cutting tool...