Process and device modelling for VLSI: S. Selberherr Microelectron. Reliab. 24, 225 (1984)doi:10.1016/s0026-2692(85)80172-5ELSEVIERMicroelectronics Journal
Theoretical or Mathematical/ leakage currents mesh generation semiconductor device models technology CAD (electronics)/ mesh semiconductor device simulation meshing noise leakage current technology CAD VLSI design/ B2560B Semiconductor device modelling and equivalent circuits B0290T Finite element analysis DOI...
The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary ...
In this chapter, definitions and comparisons focus on bipolar npn transistors. The results are applicable to widely used bipolar IC processes such as Si, SiGe, SiGe:C, GaAs HBT and InP HBT. Since the focus of this book is on high bit-rate and (mainly) large-signal circuits, noise and d...
(eZank0a.3g5eTceu0.6r5r)emntaskeeffsetchtievemlya.terial suitable for selector application by modifying material parameters to suppress Analytical modelling and performance-determining parameters. Analytical modelling on the OTS phenomenon has been widely developed in order to predict the electrical...
The charge stability of electret materials can directly affect the performance of electret-based devices such as electrostatic energy harvesters. In this paper, a spray-coating method is developed to deposit an electret layer with enhanced charge stabili
9d, e) with a total gain of 36 dB, consistent with the modelling. This operational amplifier has a unit gain frequency of 0.3 Mhz suitable for practical feedback circuits such as inverting amplifiers, integrators, logarithmic amplifiers and impedance amplifiers. Although digital and analogue...
The estimates given correspond to specific modelling of the surface gates using the TCAD simulation package. Modifications to the details of gate modelling will change the quantitative details of the numbers quoted in the Tables and Figures.
A portable guide device is characterized by comprising a transport facility start judgment means for judging that a transport facility has begun to move if a period where an acceleration detected by an acceleration sensor (SN3) is included continuously in an acceleration range at the time of start...
Quantum effect in Nanoscale SOI FINFET Device Structure: A Simulation study With CMOS technology reaching its scale minima, possibilities of implementing different MOS device variants is being successfully explored by the VLSI desi... S Mangesh,PK Chopra,KK Saini - International Conference on Devices...