and Viinikka, E., [Wet etching of silicon, in: V. Lindroos, et al.(Eds.), Handbook of Silicon Based MEMS Materials and Technologies], Elsevier: William Andrew, Amsterdam, 375-407 (2010).M.A. Gosalvez, I. Zubel, E. Viinikka, Wet etching of silicon, in: H. Seidel (Ed.), Part...
Squares of 8 to 40 m were patterned to (100) oriented silicon wafers through DWL (Direct Writing Laser) photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene) flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic ...
etchingsilicon化学蚀刻硅半导体wetetch Wet-ChemicalEtching ofSilicon Revised:2011-01-17 Source:.microchemicals.eu/technical_information Photoresists,developers,remover,adhesionpromoters,etchants,andsolvents... Phone:+4973136080-409.microchemicals.eue-Mail:sales@microchemicals.eu OurPoster„CrystallineSilicon“ ...
United States Patent US7270763 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
KOH solution and masking in wet etching of silicon trench for MEMS are investigated. Optimized conditions for KOH etching are obtained. Using this technique, silicon trenches up to 315 μm deep are etched, with masked area remaining intact. It provides a good method for 3-D fabrication of sil...
The etching characteristics of SiO2} have been investigated in the CHF3} gas plasma using the planar type reactor with the 400 kHz rf power. The etch rate ... H Toyoda,HK Itakura - 《Journal of Electronic Materials》 被引量: 12发表: 1980年 Dry etching of silicon carbide The invention co...
Etching Mechanism of Silicon Nitride in HF-Based Solutions A reaction mechanism for the etching of silicon nitride layers in aqueous hydrofluoric acid solutions is proposed. The surface of Si3N4 Si3N4 consists of... D Martin Knotter,(Dee) Denteneer, T. J. J. - 《Journal of the Electroche...
In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by me...
Texturization of multicrystalline silicon by wet chemical etching for silicon solar cells. J Mater Sci 2005; 40:1459-1463, DOI: 10.1007/s10853-005-0583-1.Panek P, Lipiflski M, Dutkiewicz J. Texturization of multicrystalline silicon by wet chemical etching for silicon solar cells[J]. J. ...
A detailed kinetic study was performed to elucidate the mechanism of wet chemical etching of silicon in a HF-rich HF/HNO3 mixture. In contrast to earlier studies, the etch rates were determined by dissolution of only a few milligrams of silicon in carefully thermostatted acid mixtures in order...