STT-VCMA-MTJ是一种新型磁性随机存储器技术,它将传统的磁性随机存储器(MRAM)与垂直磁隧道结构(VCMA)和自旋转移磁阻结构(MTJ)相结合。这种技术可以实现高密度、高速度、低功耗的数据存储,具有非常广泛的应用前景。 传统的MRAM存储器是利用自旋电子的磁矩来存储信息,但是其容量有限且功耗较大。而STT-VCMA-MTJ技术则...
(STT辅助VCMA-MTJ)作为非易失性全加器(NV-FA)中的核心部件,具有切换速度快,功耗低,稳定性好等优点,在物联网,人工智能等领域具有良好的发展前景,现已受到国内外学者的广泛关注.然而随着磁隧道结(MTJ)尺寸的不断缩小以及芯片集成度的不断提高,工艺偏差和软击穿对MTJ的影响将变得越来越严重,从而退化MTJ电磁特性,...
一种MTJ单元,VCMA驱动方法及MRAM,其中,MTJ单元中自由层(101)的稳定磁矩方向和参考层(103)的磁矩方向之间存在夹角,且夹角大于0度,小于180度,不等于90度.在采用VCMA驱动方案写入数据时,该MTJ单元可以消耗较少的电能,因此该MTJ单元具有较低的功耗.秦健鹰许俊豪...
摘要 一种MTJ单元、VCMA驱动方法及MRAM,其中,MTJ单元中自由层(101)的稳定磁矩方向和参考层(103)的磁矩方向之间存在夹角,且夹角大于0度,小于180度,不等于90度。在采用VCMA驱动方案写入数据时,该MTJ单元可以消耗较少的电能,因此该MTJ单元具有较低的功耗。 摘要附图 新闻...
本发明涉及一种VCMASTTMTJ的存储单元及存储方法,VCMASTTMTJ的存储单元包括:多个VCMASTTMTJ器件;驱动电路,被配置为器件施加电压,包括施加第一电压,调控MTJ的自由层的临界翻转电流;施加第二电压,调控MTJ自由层的磁矩方向.本发明通过电压调控实现了器件在VCMA和STT模式下切换,实现了存储器件的选通开关和存储功能,替代了...
An MTJ unit, a VCMA driving method and an MRAM, wherein in the MTJ unit, there is an included angle between a stable magnetic moment direction of a free layer (101) and a magnetic moment direction of a reference layer (103), and the included angle is greater than 0 degrees, less ...
A method of operating a voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device is disclosed. The MTJ device is switchable between a first resistance state and a second resistance state. A first threshold voltage for switching the MTJ device from the second resistance ...
According to an aspect of the present inventive concept there is provided a method for operating a voltage-controlled magnetic anisotropy, VCMA, magnetic tunnel junction, MTJ, device, wherein the MTJ device is switchable between a first resistance state and a second resistance state, and wherein ...
According to an aspect of the present inventive concept there is provided a method for operating a voltage-controlled magnetic anisotropy, VCMA, magnetic tunnel junction, MTJ, device, wherein the MTJ device is switchable between a first resistance state and a second resistance state, and wherein ...