STT-VCMA-MTJ是一种新型磁性随机存储器技术,它将传统的磁性随机存储器(MRAM)与垂直磁隧道结构(VCMA)和自旋转移磁阻结构(MTJ)相结合。这种技术可以实现高密度、高速度、低功耗的数据存储,具有非常广泛的应用前景。 传统的MRAM存储器是利用自旋电子的磁矩来存储信息,但是其容量有限且功耗较大。而STT-VCMA-MTJ技术则...
本文基于STT辅助VCMA-MTJ磁化动力学分析,在充分考虑薄膜生长工艺偏差,刻蚀工艺偏差以及软击穿影响的情况下,建立了更为精确的STT辅助VCMA-MTJ电学模型,并将其应用到NV-FA电路中,研究上述工艺偏差以及软击穿对NV-FA写入和输出功能的影响,主要工作如下: 首先,基于STT辅助VCMA-MTJ磁化动力学研究,采用LLG方程和Brinkman电阻...
步骤1:将要存储的压缩数据按照一定的格式写入VCMA- MTJ中。 步骤2:将没有压缩的数据按照一定的格式写入STT-MTJ中。 步骤3:当需要读取压缩数据时,通过外部电路读取VCMA- MTJ中的压缩数据。 步骤4:当需要读取未压缩数据时,通过外部电路读取 STT-MTJ中的未压缩数据。
一种MTJ单元,VCMA驱动方法及MRAM,其中,MTJ单元中自由层(101)的稳定磁矩方向和参考层(103)的磁矩方向之间存在夹角,且夹角大于0度,小于180度,不等于90度.在采用VCMA驱动方案写入数据时,该MTJ单元可以消耗较少的电能,因此该MTJ单元具有较低的功耗.秦健鹰许俊豪...
A method of operating a voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device is disclosed. The MTJ device is switchable between a first resistance state and a second resistance state. A first threshold voltage for switching the MTJ device from the second resistance ...
本发明涉及一种VCMASTTMTJ的存储单元及存储方法,VCMASTTMTJ的存储单元包括:多个VCMASTTMTJ器件;驱动电路,被配置为器件施加电压,包括施加第一电压,调控MTJ的自由层的临界翻转电流;施加第二电压,调控MTJ自由层的磁矩方向.本发明通过电压调控实现了器件在VCMA和STT模式下切换,实现了存储器件的选通开关和存储功能,替代了...
According to an aspect of the present inventive concept there is provided a method for operating a voltage-controlled magnetic anisotropy, VCMA, magnetic tunnel junction, MTJ, device, wherein the MTJ device is switchable between a first resistance state and a second resistance state, and wherein ...
According to an aspect of the present inventive concept there is provided a method for operating a voltage-controlled magnetic anisotropy, VCMA, magnetic tunnel junction, MTJ, device, wherein the MTJ device is switchable between a first resistance state and a second resistance state, and wherein ...
An MTJ unit, a VCMA driving method and an MRAM, wherein in the MTJ unit, there is an included angle between a stable magnetic moment direction of a free layer (101) and a magnetic moment direction of a reference layer (103), and the included angle is greater than 0 degrees, less ...