STT-VCMA-MTJ是一种新型磁性随机存储器技术,它将传统的磁性随机存储器(MRAM)与垂直磁隧道结构(VCMA)和自旋转移磁阻结构(MTJ)相结合。这种技术可以实现高密度、高速度、低功耗的数据存储,具有非常广泛的应用前景。传统的MRAM存储器是利用自旋电子的磁矩来存储信息,
基于STT辅助VCMA-MTJ磁化动力学研究,采用LLG方程和Brinkman电阻方程,建立了STT辅助VCMA-MTJ电学模型,并研究了电压脉冲幅值和正负偏置对STT辅助VCMA-MTJ状态切换的影响.结果表明,通过合理设置高电压脉冲(Vb1)和低电压脉冲(Vb2)的幅值以及Vb2的正负偏置,可以实现STT辅助VCMA-MTJ从P态到AP态以及从AP态到P态的有效切换....
图中,VCMA-MTJ和STT-MTJ之间通过一条短线连接,外部 电路通过另一条短线与STT-MTJ连接。VCMA-MTJ和STT-MTJ 被电隔离。 存储方法和流程 VCMA-STTMTJ单元主要由VCMA-MTJ部分和STT-MTJ部分组 成,两者可以各自实现不同的存储方式。 VCMA存储器可以利用VCMA作用的磁随机存储器,实现高密 ...
一种MTJ单元,VCMA驱动方法及MRAM,其中,MTJ单元中自由层(101)的稳定磁矩方向和参考层(103)的磁矩方向之间存在夹角,且夹角大于0度,小于180度,不等于90度.在采用VCMA驱动方案写入数据时,该MTJ单元可以消耗较少的电能,因此该MTJ单元具有较低的功耗.秦健鹰许俊豪...
magnetic tunnel junction (MTJ)VCMA-MRAMVCMA assisted STT switchingmulti-functional circuitTMRToday's technology demands compact, portable, fast, and energy-efficient devices. One approach to making energy-efficient devices is an in-memory computation that addresses the memory bottleneck issues of the...
Magnetic tunnel junction (MTJ)Non-volatile full-adderVoltage-controlled magnetic anisotropy (VCMA)Low-power computingThe next generation in computing era will be within the realm of internet of things (IoT). High density, near-zero leakage, and high endurance are some of the important properties ...
本发明涉及一种VCMASTTMTJ的存储单元及存储方法,VCMASTTMTJ的存储单元包括:多个VCMASTTMTJ器件;驱动电路,被配置为器件施加电压,包括施加第一电压,调控MTJ的自由层的临界翻转电流;施加第二电压,调控MTJ自由层的磁矩方向.本发明通过电压调控实现了器件在VCMA和STT模式下切换,实现了存储器件的选通开关和存储功能,替代了...
Compared with the conventional MTJ switching approaches, voltage controlled magnetic anisotropy switching (VCMA) features low switching current, minimal control circuitry and calibration process, and insensitivity to the write pulse duration. In this paper an efficient design for TRNG based on VCMA using...
The method includes applying a first voltage pulse across the MTJ device with an amplitude having an absolute value equal to or greater than the first threshold voltage and lower than the second threshold voltage, thereby setting the MTJ device to the first resistance state regardless of whether ...
MTJ device from the second resistance state to the first resistance state is lower than a second threshold voltage for switching the MTJ device from the first resistance state to the second resistance state;the method comprising:applying a first voltage pulse across the MTJ device with an ...