摘要 一种MTJ单元、VCMA驱动方法及MRAM,其中,MTJ单元中自由层(101)的稳定磁矩方向和参考层(103)的磁矩方向之间存在夹角,且夹角大于0度,小于180度,不等于90度。在采用VCMA驱动方案写入数据时,该MTJ单元可以消耗较少的电能,因此该MTJ单元具有较低的功耗。 摘要附图 新闻...
一种MTJ单元,VCMA驱动方法及MRAM,其中,MTJ单元中自由层(101)的稳定磁矩方向和参考层(103)的磁矩方向之间存在夹角,且夹角大于0度,小于180度,不等于90度.在采用VCMA驱动方案写入数据时,该MTJ单元可以消耗较少的电能,因此该MTJ单元具有较低的功耗.秦健鹰许俊豪...
Voltage-controlled magnetic anisotropy (VCMA)Low-power computingThe next generation in computing era will be within the realm of internet of things (IoT). High density, near-zero leakage, and high endurance are some of the important properties of magnetic RAM (MRAM) which makes it attractive ...
An MTJ unit, a VCMA driving method and an MRAM, wherein in the MTJ unit, there is an included angle between a stable magnetic moment direction of a free layer (101) and a magnetic moment direction of a reference layer (103), and the included angle is greater than 0 degrees, less ...
Patent ApplicationRandom Access MemoryNews editors obtained the following quote from the background information supplied by the inventors:"The present invention relates generally to the field of semiconductor memory device technology and moreparticularly to stacked magnetoresistive random-access memory devices...