We analyze the evolution of an entangled many-body state in a Josephson tunneling junction. A N00N state, which is a superposition of two complementary Fock states, appears in the evolution with sufficient probability only for a moderate many-body interaction on an intermediate time scale. This...
Fabrication of ferroelectric tunnel junction using superconducting and magnetic electrodes Vacuum, Volume 159, 2019, pp. 464-467 Ravikant,…, Ashok Kumar Effective bandgap tuning with non-trivial modulation in room temperature magnetic and electrical responses of low level Ba–Cr co-substituted BiFeO3 ...
...似的,都是利用磁性材料的特性,纪录的核心是一种称为磁隧道结点(Magnetic Tunneling Junction)的组件。 www.istis.sh.cn|基于5个网页 2. 磁性穿隧接面 ...、低耗电及抗辐射等多项优点之非挥发记忆体,本所采用磁性穿隧接面(Magnetic Tunneling Junction)元件作为MRAM记忆体 … ...
To demonstrate the feasibility of this mechanism, we design a model structure of Pt/BaTiO3/LaAlO3/Pt/BaTiO3/LaAlO3/Pt double barrier ferroelectric tunnel junction (DB-FTJ), which can be considered as two identical Pt/BaTiO3/LaAlO3/Pt single barrier ferroelectric tunnel junctions (SB-FTJs) ...
It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness (0.40~0.53 nm), and...
At the heart of XtremeSense TMR technology is a thin-film magneto-resistive device, which is called a “Magnetic Tunnel Junction” (MTJ). In its simplest form, the MTJ consists of two electric-conducting magnetic layers on either side of a thin but highly robust insulating layer. One magneti...
(polishing, dicing, and lapping), and custom thin-film and device fabrication. We also specialize in the construction of flexible imaging systems featuring advanced magnetic tunnel junction (MTJ) sensor technologies. A summary of magnetic tunnel junction sensor development for industrial applications can...
The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of . The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio...
TheCurrent-In-Plane Tunneling (CIPT) methodis used to characterize the properties of a tunnel junction, by landing a probe on top of the sample. These non-invasive measurements greatly speed up development and testing, due to the microsized probe spacings these measurements can be used for both...
The advent of thescanning tunneling microscope(STM) started the search of IETS in the tunneling junction of theSTM[7]. The stakes were high: on the one hand-side, STM would be able to detect the vibrational signatures of the species in the junction making it possible to develop a chemical...