TUNNEL junction devicesALUMINUM oxideHAFNIUM oxideARTIFICIAL neural networksPOLARIZATION (Electricity)Ferroelectric tunneling junctions (FTJs) with tunable tunneling electroresistance (TER) are promising for many emerging applications, including non-volatile memories and neurosynaptic computing. One of the key ...
ferroelectric devices (i.e., tunneling junctions and transistors) with voltage thresholds were recently proposed as suitable candidates. However, their development is hindered by the inherent integration issues of inorganic ferroelectrics, as well
ElectronTunnelingthroughInsulators E W pot W )(xφ W )(xφ x t0 k xik CΨ x k real x k x k real Re B Ψ xik B x eB=Ψ xik C x eC=Ψ imaginary x ⎪ ⎫ ⎪ ⎧ t xik x A − Ψ Re A Ψ ⎪ ⎭
Model calculations of the conductance of a metal/ferroelectric/semiconductor tunnel junction show very large TER ratio due to modulation of the Schottky barrier.Figure 3cshows the calculated TER ratio as a function of electron concentrationnin a semiconducting electrode. Here the electronic potential prof...
and the thermally assisted tunneling model was used to fit the data, as shown in Supplementary Fig.S1b–e. When the ferroelectric polarization points to the NSTO, a lower Schottky barrier height with a narrower depleted region is obtained in the ON state, consistent with the ferroelectric field...
This device, here termed a ferroelectric tunnel junction (FTJ), can be used to study the interplay of ferroelectricity and electron tunneling. It may be noted that the discovery of ferroelectricity goes back to 1920, 12 i.e., approximately to the period of time when the principles of ...
The output voltage at the junction of the MOfeS-FET and the serial resistance was about 1 V (logic “1″). Conversely, the negative Vgs pulse (−8 V, input logic “1″) can program the device to the LRS, corresponding to the output voltage of about 0 V (logic “0″). These ...
The FE/dielectric stack structure is also adopted to enhance the ratio of the high/low resistance state in the FE tunneling junction [29]. To meet the high-performance requirements in the aforementioned FE devices, the growth behavior, crystalline structure, and FE properties of Fe-HfO2 films ...
Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a composite barrier that combines a functional ferroelectric film and a...
(MTJ) is the staple of spintronics.3A MTJ exploits the switchable magnetisation of the two ferromagnetic (FM) metal electrodes. Changing their magnetic configuration from parallel to antiparallel, e.g., by an applied magnetic field, causes a large change in tunnelling resistance of the junction, ...