Rahi, S.B., Asthana, P., Gupta, S.: Heterogate junctionless tunnel field-effect transistor: future of low-power devices. J. Comput. Electron. 16(1), 30-38 (2017)S. B. Rahi, P. Asthana, and S. Gupta, Heterogate junction- less tunnel field-effect transistor: Future of low-power ...
This paper proposes a junctionless tunnel field effect transistor (JLTFET) with dual material gate (DMG) structure and the performance was studied on the basis of energy band profile modulation. The two-dimensional simulation was carried out to show the effect of conduction band minima on the abr...
This paper proposes a novel polarity-control junctionless tunnel field-effect transistor (PC-JL-TFET)-based biosensor for the label-free detection of biomolecule species in efficient ways. Unlike conventional designs, the polarity-control concept induces the generation of drain (n+) and source (p+...
Rapid Detection of Biomolecules in a Junction Less Tunnel Field-Effect Transistor (JL-TFET) Biosensor 2022, Silicon Investigation of Hot Carrier–induced Degradation in Nanoscale Junctionless MOSFETs: A Reliability-based Analysis 2022, Nanotechnology in Electronics: Materials, Properties, Devices DC performa...
It is well known that tunnel field-effect transistors face serious issues related to low ON-state current and poor radio frequency (RF) response. We report herein a unique method for realizing a sharp tunneling junction in a charge plasma-based junctionless tunnel field-effect transistor by ...
This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the tunneling barrier width at the channel/source interface...
In this paper, we explain the problem of dramatic OFF-state leakage in junctionless tunnel field effect transistor (JLTFET) for a channel thickness greater than 10nm. In JLTFET, with channel width greater than 10nm, the depletion region primarily remains confined below the dielectric–semiconductor...
In this work, we demonstrate the design of a dual-material gate and Gaussian-doped source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET). Unlike the conventional dual-material gate heterostructure junctionless tunnel field-effect transistor (DMG-HJLTFET), the proposed stru...
A junctionless tunnel field effect transistor with low subthreshold slope we demonstrate the design of a triple gate n-channel junctionless transistor that we call a junctionless tunnel field effect transistor (JLTFET). The JLTFE... B Ghosh,P Bal,P Mondal - 《Journal of Computational Electronics...
junctionlessthicknessioffwe propose a nanoscale single gate ultra thin body intrinsic channel tunnel field effect transistor using the charge plasma concept for... PK Asthana,Y Goswami,B Ghosh - 《Journal of Semiconductors》 被引量: 4发表: 2016年 An Insight into the DC and Analog/RF Response of...