The effect of L-BTBT on FIN shaped gate Junctionless field effect transistor(JLFET) with the ground plane (GP) in oxide has been investigated. The proposed device is simulated using 3-D Silvaco TCAD and shows that it can mitigate the L-BTBT and leads to efficient volume depletion which ...
This paper proposes a junctionless tunnel field effect transistor (JLTFET) with dual material gate (DMG) structure and the performance was studied on the basis of energy band profile modulation. The two-dimensional simulation was carried out to show the effect of conduction band minima on the abr...
A double-gate charge-plasma-based super-steep negative capacitance junctionless tunnel field effect transistor (NC-JLTFET) using a ferroelectric gate stack is proposed. Structurally, the NC-JLTFET consists of a heavily doped n-type silicon (Si) channel with two distinctive gates (control gate and...
We present a tri-gate In0.53Ga0.47As-on-insulator (InGaAs-OI) junctionless field-effect transistor (JLFET) architecture. The fabricated devices feature a 20-nm-thick n-In0.53Ga0.47As channel doped to 1018/cm3 obtained by metal organic chemical vapor phase deposition and direct wafer bonding alo...
This paper proposes a novel polarity-control junctionless tunnel field-effect transistor (PC-JL-TFET)-based biosensor for the label-free detection of biomolecule species in efficient ways. Unlike conventional designs, the polarity-control concept induces the generation of drain (n+) and source (p+...
Rapid Detection of Biomolecules in a Junction Less Tunnel Field-Effect Transistor (JL-TFET) Biosensor 2022, Silicon Investigation of Hot Carrier–induced Degradation in Nanoscale Junctionless MOSFETs: A Reliability-based Analysis 2022, Nanotechnology in Electronics: Materials, Properties, Devices DC performa...
In this paper, we explain the problem of dramatic OFF-state leakage in junctionless tunnel field effect transistor (JLTFET) for a channel thickness greater than 10nm. In JLTFET, with channel width greater than 10nm, the depletion region primarily remains confined below the dielectric–semiconductor...
Junctionless field-effect transistors (JL-FETs) with a 3 nm channel length are fabricated on silicon-on-insulator (SOI) substrates using simple process tec... S Migita,Y Morita,M Masahara,... - 《Japanese Journal of Applied Physics》 被引量: 18发表: 2013年 Simulations of gated Si nanowire...
Based on the quasi-two-dimensional(2D) solution of Poisson's equation in two continuous channel regions, an analytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding-gate(JLDMCSG) metal-oxide-semiconductor field-effect transistor(MOSFET) is developed. Using ...
In this paper, an analytical model for Junctionless (JL) Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) based biosensor for label free electrical detection of biomolecules like enzyme, cell, DNA etc. using the Dielectric Modulation (DM) technique has been developed. The analytical result...