STM reveals that the tunneling current and the area of high tunneling current for positive sample voltage decrease as the temperature is increased above 500°C, even though the surface keeps the 2 × 4 structure. PL measurements suggest that the decrease in tunneling current is related to ...
To read the tunneling current, we used the STM module (R9+, RHK Technology). Autocorrelation measurement setup To measure the second-order correlation function of the electrically modulated exciton-trion interconversion and correspondingly modified PL quantum yield, the He-Ne laser with a wavelength ...
Information is acquired by monitoring the current as the tip's position scans across the surface, and is usually displayed in image form. STM can be a challenging technique, as it requires extremely clean and stable surfaces, sharp tips, sophisticated electronics, and excellent ...
The electrical properties of viologen derivatives were studied of the tunneling current characteristics on the length of the viologen derivatives using self-assembling techniques and ultra high vacuum scanning tunneling microscopy (UHV-STM). The current-voltage (I-V) and differential conductance (dl/dV...
Using a scanning tunneling microscope, the differential conductance (dI/dV) versus the applied bias voltage (V) on Au(111) and n- and p-type Si(001) surfaces was measured under a constant tunneling current. STM tips were treated by a thermal-field treatment before measurements to improve ...
Scanning tunneling microscopy (STM) has been used to image the surface structure of gasified highly oriented pyrolytic graphite (HOPG). Surfaces of HOPG we... D.,Tandon,and,... - 《Carbon》 被引量: 24发表: 1997年 Angle-resolved tunneling study on the anisotropic gap of Bi-2212 superconduct...
Scanning Tunneling Microscopy (STM) and tunneling spectroscopy have been used to study localized dangling bond defects at the Si/SiO2interface and in metal overlayers on Si(111). On mildly oxidized silicon, electron traps are observed which give rise to telegraph noise on the tunneling current. In...
To detect a weak OPP-induced tunneling current, we need to employ a modulation technique using a lock-in amplifier. However, the modulation of optical intensity causes severe problems such as thermal expansions of STM tip and sample as described before. Therefore, we need the delay-time modulati...
In typical metallic tunnel junctions, the tunneling events occur on a femtosecond timescale. An estimation of this time requires current measurements at optical frequencies and remains challenging. However, it has been known for more than 40 years that a
Partially oxidized Si(111) surfaces and surfaces of highly oriented pyrolytic graphite (HOPG) were studied by two different ultrahigh vacuum scanning tunneling microscope (UHV-STM) systems and by an STM system working under ambient conditions, respectively. The STM current images of partially oxidized...