Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI3. We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI3, depending on the polarity and amplitude of the ...
1. 直接穿隧电流 而经由氮氧化矽闸极介电层的直接穿隧电流(direct tunneling current) (也就是闸极漏电流)会随著氮氧化矽物理厚度在未来几年的 … ssttpro.acesuppliers.com|基于6个网页 2. 直接隧穿电流 ... ) direct tunneling 直接隧穿 )Direct tunneling current直接隧穿电流) direct tunneling gate cu...
网络闸极穿隧漏电流 网络释义 1. 闸极穿隧漏电流 ...化层技术,变得更为困难,因为传统闸氧化层存在大量的闸极穿隧漏电流(gate leakage tunneling current)。 www.docin.com|基于 1 个网页
An anomalous increase of electric conduction with decreasing temperature was found in the current through Pb(Ti,Zr)O3 ferroelectric/SrTiO3 epitaxial heterostructures. Comparison with current-voltage characteristics of other ferroelectric epitaxial heterostructures and the analysis using the band diagram indicate...
We present a model molecular system with an unintuitive transport-extension behavior in which the tunneling current increases with forced molecular elongation. The molecule consists of two complementary aromatic units (1,4-anthracenedione and 1,4-anthracenediol) hinged via two ether chains and attached...
Specifically, two pA current references are generated via small tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent and proportional to temperature, respectively, which are then used to charge digitally-controllable banks of metal-insulator-metal (MIM) ...
a weak laser field is used to streak the tunneling current produced by a strong elliptically polarized laser field in an attoclock configuration, allowing us to retrieve the tunneling ionization time relative to the field maximum with a precision of a few attoseconds. This overcomes the difficulti...
Advanced CIPT system for semiconductor R&D and failure analysis, mapping 300 mm wafers with a high perpendicular-to-plane magnetic field Leia mais CIPT Method TheCurrent-In-Plane Tunneling (CIPT) methodis used to characterize the properties of a tunnel junction, by landing a probe on top of the...
Trap assisted tunneling current (JTAT) has been computed for neutral and positive traps with finite ranged core-potential in a metal-oxide-semiconductor structure. The calculation is based on Bardeen transfer Hamiltonian approach and the elastic tunneling approximation and includes both direct tunneling ...
Spin-polarized tunneling current through a thin film of a topological insulator in a parallel magnetic field We calculate the tunneling conductance between the surface states on the opposite sides of an ultrathin film of a topological insulator in a parallel magne... SS Pershoguba,VM Yakovenko ...