MEMORY DEVICE WITH SADDLE TYPE TRANSISTOR AND FIN TYPE TRANSISTOR AND METHOD FOR MANUFACTURING THE SAMESUMMARY OF THE INVENTION The present invention provides a method of fabricating a transistor of a memory device capable of simultaneously securing high speed and low power characteristics required in ...
effect diode (FED) type capacitorless one transistor (1T) dynamic random access memory (DRAM) cell are investigated via device simulator for the first ... T Imamoto,T Endoh - 《Japanese Journal of Applied Physics》 被引量: 1发表: 2014年 One-transistor type DRAM A one-transistor type DRAM...
Device modeling of ferroelectric memory field-effect transistor (FeMFET). IEEE Trans. Electron Devices 49, 1790-1798 (2002). HT Lue,CJ Wu,TY Tseng - 《IEEE Transactions on Electron Devices》 被引量: 165发表: 2002年 Device modeling of ferroelectric memory field-effect transistor for the applica...
By integrating sensing, memory and processing functionalities, biological nervous systems are energy and area efficient. Emulating such capabilities in artificial systems is, however, challenging and is limited by the device heterogeneity of sensing and
3a). Au is used as the source and drain contacts since it is possible to obtain both p-type and n-type SWNT TFTs with symmetric device performance. On top of the transistor, a high-k oxide (HfO2) passivation layer is further deposited using atomic layer deposition (ALD) to convert ...
ideally in a single device. Here we show that an organic transistor that incorporates two bulk heterojunctions is capable of light intensity-dependent active photoadaptation. The approach couples the photovoltaic effect in bulk heterojunctions with electron trapping in the dielectric layer, allowing adapti...
A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector A novel Si memory device composed of a small one-dimensional (1D) Si-wire metal-oxide-semiconductor (MOS) field-effect transistor (FET) and a single...
A memory device includes a memory element composed of a first thin film transistor (T21) having a memory function, and a select element composed of a second thin film transistor (T22) for selecting the memory element. A gate insulation film (22A) of the first thin film transistor (T21) ha...
(FET) using layered NiPS3that reveals n-type semiconducting behavior. Devices using bulk and few-layer NiPS3with gold contacts show on/off ratios of ~103–105at 25 °C. The device characteristics reveal an increase in on-state current with decrease in threshold voltage and the Schottky ...
Abstract Field effect transistor (FET) based sensors have attractive features such as small size, ease of mass production, high versatility and comparably low costs. Over the last decade, many FET type biosensors based on various nanomaterials (e.g. silicon nanowires, graphene, and transition metal...