The present invention provides a method of manufacturing the single-electron transistor having a memory function. 在该单电子晶体管中,顺序叠置第一衬底和绝缘膜. In the single-electron transistors, the order of stacking the first substrate and the insulating film. 第二衬底设置在绝缘膜上,并包括源极...
The basic memory element in sequential logic systems is provided by one of several ‘bistable’ gates, so called because of the two different but stable outputs which the gates produce. 2.3.30.1 The SR bistable (flip-flop) The term ‘flip-flop’ is traditionally used with respect to basic ...
the electronic circuit operating with field effect having characteristics such that the gate to source (2) is to be connected, in the case of a component type (1a) to the positive pole, and in the case of a p type element (1b) to the negative pole of a source. n,the component (1...
THIN-FILM TRANSISTOR, SEMICONDUCTOR MEMORY DEVICE HAVING THIN-FILM TRANSISTOR, AND ELECTRONIC APPARATUS HAVING THIN-FILM TRANSISTOR OR SEMICONDUCTOR MEMORY DEVICE 来自 百度文库 喜欢 0 阅读量: 20 申请(专利)号: JP特願平9-74211 申请日期: 19970326 公开/公告号: JP特開平10-270698A 公开/公告...
Electronics.a semiconductor device that amplifies, oscillates, or switches the flow of current between two terminals by varying the current or voltage between one of the terminals and a third: although much smaller in size than a vacuum tube, it performs similar functions without requiring current ...
28 For a molecular switch or memory device, isomerization triggered by a redox event or light could also be utilized. Such hysteresis has been reported for a binuclear ruthenium complex containing S and S—O functions. RuII preferentially bonds to the S of the S—O moiety, while RuIII has ...
By integrating sensing, memory and processing functionalities, biological nervous systems are energy and area efficient. Emulating such capabilities in artificial systems is, however, challenging and is limited by the device heterogeneity of sensing and
PURPOSE: To increase a resistant property to an α-ray soft error or a node leak by a method wherein a capacity between two storage nodes is increased and the ON current of a TFT is increased in an SRAM memory cell wherein, when a polycrystalline silicon film for a channel for th...
The researchers created a new technology design for field effect transistors, which are basic switching devices in computers and other electronic devices. Those types of transistors also are promising candidates for next generation nanodevices. They can offer better switching behavior for...
still empty Therefore, the optical memory function is visible in our device. No hole exists in the channel region because of the n-type graphene channel. Therefore, the residual trapped excess electrons are expected to be released cgoorfanIdDtauScautlnlrydeesfrirsottmahnetcdheaeirnAkducuoOcnexddl...