Analysis of Transfer Characteristics of Junctionless GaAs-Nanotube MOSFET with Hafnium Oxide DielectricGate all around (GAA)NanowireNanotubeMOSFETJunctionless (JL)As the feature size of device moving below sub-20-nm regime, it is becoming very challenging to create very sharp junction at source/drain end. Junctionless device has p...
The transfer process enabled the researchers to reduce the interconnection distance between the E-mode Si MOSFET and D-mode GaN HEMT to the order of 100μm. Typically, chip-to-chip connections measure around 2mm. Reducing such distances are key to avoiding parasitic inductances, which introduce ...
The transfer function may be a simple linear connection or a nonlinear dependence,that determines the most important characteristics of a sensor: (i) In the general case of a nonlinear function, the sensitivity is defined as the slope b = dS(s0)/ds at any particular input value s0, and ...
Furthermore, the described features, structures, or characteristics of the invention may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided, such as examples of programming, software modules, user selections, network trans...
characteristics of a non-volatile random access memory, the free layer exhibits thermal stability against random fluctuations so that the orientation of the free layer is changed only when it is controlled to make such a change. This thermal stability can be achieved via the magnetic anisotropy ...
Our results of simulation shows that GaN MFSFETs hold the numerous advantages in electrical characteristics, such as the maximal drain current reaching 69mA, and the threshold voltage and the subthreshold slope as low as 1.5V and 58mV/decade, respectively. In general, these theoretical predictions...
MOSFETVariable sensitivityNear-infrared regionIn this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to ...
An investigation of the structural and thermal transfer characteristics of commercial power MOSFET devices using experimental and modelling techniquesThis paper presents the results of an investigation into the structural and electrothermal properties of a group of commercial power MOSFET devices. Variations ...
Inorganic semiconductor materials can be processed to improve their electronic characteristics, for example amorphous silicon can be treated to form low-temperature or high-temperature poly-crystalline silicon. In other process methods, microcrystalline semiconductor layers can be formed by using an ...
The process of manufacture described above allows the manufacture of a smaller DRAM cell without deteriorating the current drive capability or the shut off characteristics of the DRAM cell. The order of the process steps described above is exemplary and may be varied as known to those skilled in...