This paper presents the results of an investigation into the structural and electrothermal properties of a group of commercial power MOSFET devices. Variations between devices of the same type designation were examined using electrothermal measurements, microscopic analysis and mathematical simulation ...
MOSFET embodiments of the present invention provide highly linear transfer characteristics (e.g., Iv. V) and can be used effectively in linear power amplifiers. These linear transfer characteristics are provided by a MOSFET having a channel that operates in a linear mode and a drift region that...
Research on the thermal generation mechanism and transfer characteristics in the thermoelectric transport process of MOSFET power devices Mengya Zhang, ... Ling Li April 2025 Research articleAbstract only Thermoelastic damping in bi-layered micro/nanobeam resonators using the dual-phase-lag generalized hea...
The Short Channel and Quantum Confinement Effects on Transfer Characteristics of Si NWMOSFET Depending on the Gate Length and Temperature In fact, quantum effects such as confinement and tunneling have played a significant role in device characteristics. In this work, we have investigated ... GEN,...
In this paper, we analyzed the power MOSFET devices for high voltage and high current operation. 4H-SiC was used instead of Si to improve the static characteristics of the device. Since 4H-SiC has a high critical electric field due to wi... T Kim,C Jeong,J Goh,... - 《Journal of ...
This tool also can extract the frequency-dependent equivalent R, L and C characteristics of the coils, so the engineer can construct an equivalent circuit model of an inductive coil antenna. Resonance is then achieved through the addition of an external capacitance. For magnetic-resonance-type WPT...
MOSFET inverters, frequency-dependent models of coil antennas and the rectifier circuit, and even embedded control. Using this dynamic link capability, an engineer can calculate efficiency maps by sweeping various geometric alignments and electrical characteristics at the same time. This data can be ...
Investigation of Loss Characteristics in SiC-MOSFET Based Three-Phase Converters Subject to Power Cycling and Short Circuit Aging To accelerate the transistor aging, two aging methodologies are used: Power Cycling (PC) and Short Circuit (SC) aging. And then, through a double-... JY Jeong,S Kw...
(IDS) is also increased, confirming that the device is n-channel. Due to the n+ doping and low energetic contact barriers, the variation ofIDSwithVDSis linear without any inflection point at low-VDSregion (VDS≤∼0.1 V). The transfer characteristics (IDS–VGS) of Si NR-FET withVDS...
tuning capacitors80,82,84may be selected depending, for example, on the characteristics of the coils36,40. It should also be appreciated that the power transfer system20may include any number of coil tuning capacitors80,82,84(including zero), in series or in parallel with the primary coil36...