time-dependent dielectric breakdown 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 时间取决于介质击穿 翻译结果2复制译文编辑译文朗读译文返回顶部...
time-dependent dielectric breakdown (TDDB)。 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 时间取决于介质击穿(TDDB)。
More and more attention has been devoted to the thermal and electrical stability of metal–dielectric interfaces in microelectronic devices. One of the major driving forces is the need to understand the mechanisms of dielectric breakdown with different metal–dielectric interfaces. A dielectric will ...
The mechanism that causes time dependent dielectric breakdown begins with an electron tunneling through the oxide, a phenomenon known as Fowler-Nordheim tunneling. Electrons in the conduction band of the conductor above or below the oxide can randomly acquire enough energy to jump the energy barrier ...
1) Time Dependent Dielectric Breakdown 与时间有关的介质击穿(TDDB)2) Time-dependence Dielectric Breakdown (TDDB) 时间相关介质击穿3) voltage-time-to-breakdown curve 击穿电压对击穿时间的关系曲线4) time dependent 与时间有关的 例句>> 5) dielectric breakdown 介质击穿 1. Research on dielectric ...
2)Time Dependent Dielectric Breakdown与时间有关的介质击穿(TDDB) 3)dielectric breakdown介质击穿 1.Research on dielectric breakdown and discharge channel in powder-mixed EDM;混粉电火花加工介质击穿及放电通道位形研究 2.The dielectric breakdown of silicon dioxide film has been discussed when ESD pulse vol...
Time-dependent dielectric breakdown of 4H-SiC/SiO2 MOS capacitors A.: Time-dependent dielectric breakdown of 4H-SiC/ MOS capacitors, IEEE Trans. Device and Materials Rel., vol. 8, no. 4, pp. 635-641, Dec. ... M Gurfinkel,JC Horst,JS Suehle,... 被引量: 0发表: 2009年 Time-Depend...
Time-dependent dielectric breakdown (TDDB) data are presented for the first time on 200 AA chemical-vapour-deposited oxide films. The electric-field stress was performed at highly accelerated conditions (11-12 MV/cm). It is found that, owing to its lower defect density, TDDB of CVD oxides ...
Learn how nanoTDDB enables much higher resolution, better localized characterization of dielectric breakdown events
The current invention provides a method of determining the lifetime of a semiconductor device due to time dependent dielectric breakdown (TDDB). This method includes providing a plurality of samples of dielectric layer disposed as a gate dielectric layer of a MOS transistor, approximating a source/...