5. Physics-Based Electromigration and Time Dependent Dielectric Breakdown Modeling and Reliability Analysis for Nanometer VLSI Circuits. [D] . Huang, Xin. 2016 机译:纳米VLSI电路的基于物理的电迁移和时变介电击穿建模以及可靠性分析。 6. Time Dependent Dielectric Breakdown in Copper Low-k Interconnect...
Shanware.Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics. Journal of Applied Physics . 2000J. W. McPherson, "Physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics," in Oxide reliability: a summary of silicon oxide wearout,...
TTDB-Time Dependent Dielectric Breakdown: Thin layers of silicon dioxide used as a dielectric for capacitors or as the gate oxide for a MOS semiconductor device are subject to a wearout mechanism known as time dependent dielectric breakdown (TDDB). This mechanism causes the dielectric to break ...
Time-dependent dielectric breakdown measurements were performed at 200 degC on 4H-SiC MOS capacitors and vertical DMOSFETs with 50-nm-thick nitrided oxides in order to better understand the physical mechanisms of failure and to predict the component reliability. Oxide breakdown locations are shown to...
Time-dependent dielectric breakdown of 4H-SiC/SiO2 MOS capacitors A.: Time-dependent dielectric breakdown of 4H-SiC/ MOS capacitors, IEEE Trans. Device and Materials Rel., vol. 8, no. 4, pp. 635-641, Dec. ... M Gurfinkel,JC Horst,JS Suehle,... 被引量: 0发表: 2009年 Time-Depend...
2)Time Dependent Dielectric Breakdown与时间有关的介质击穿(TDDB) 3)dielectric breakdown介质击穿 1.Research on dielectric breakdown and discharge channel in powder-mixed EDM;混粉电火花加工介质击穿及放电通道位形研究 2.The dielectric breakdown of silicon dioxide film has been discussed when ESD pulse vol...
Correlations between stress-induced positive charges and time-dependent dielectric breakdown in...Correlations between stress-induced positive charges and time-dependent dielectric breakdown in...Examines the correlation between stress-induced positive charges and time-dependent dielectric breakdown (TDDB)...
4) time dependent 与时间有关的 例句>> 5) dielectric breakdown 介质击穿 1. Research on dielectric breakdown and discharge channel in powder-mixed EDM; 混粉电火花加工介质击穿及放电通道位形研究 2. The dielectric breakdown of silicon dioxide film has been discussed when ESD pulse voltage in ...
The smooth surface of the Ta/TiN stacked electrode improves the dielectric characteristics such as leakage, breakdown and time-dependent dielectric breakdown (... N Inoue,I Kume,J Kawahara,... - 《Japanese Journal of Applied Physics Part Regular Papers Brief Communications & Review Papers》 被引...
The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices... Samanta,Piyas. - 《Journal of Applied Physics》 被引量: 2发表: 2017年 Mechanistic analysis of temperature-dependent current conduction thro...