The threshold voltage shift exhibited by strained silicon NMOS devices is compensated with respect to the threshold voltages of PMOS devices formed on the same substrate by increasing the work function of the NMOS gates. The NMOS gate work function exceeds the PMOS gate work function so as to ...
One of the most important physical parameters of a MOSFET is its threshold voltage V th , defined as the gate voltage at which the device starts to turn on. The accurate modeling of threshold voltage is import
aFig. 1(b) shows the Vth-degradation of a stressed PMOS device under long term AC operation conditions, in which the threshold voltage of the stressed PMOS device shifts up as the number of cycles in the stress signal increases 。 1 (b)在长的期限AC操作情况下显示一个被注重的PMOS设备的...
PMOS logic circuit and to the output of the NMOS logic circuit; wherein at least a portion of the NMOS field effect transistors of the NMOS logic circuit have a first threshold voltage; wherein at least a portion of the PMOS ... C Pacha,J Berthold 被引量: 0发表: 2007年 Super-cell ...
The difference between the threshold voltages Vt of pMOS and nMOS transistors is a critical issue in the low-voltage operation of CMOS circuits. The pMOSMOS Vt balancing profit is analyzed in terms of subthreshold leakage current and the performance of CMOS LSIs and the minimum supply voltage of...
threshold voltage of NMOS fluctuates in the range of 0.53V to 0.69V, and threshold voltage of PMOS fluctuates in the range of -0.47V to -0.67V, the CC-MCML technique is able to suppress ΔV_B within only 30mV, where as the conventional MCML technique caused maximum ΔV_B of 1.0V....
withtheexperimenta1results.Also.thevariationsofthethresholdvoltageswithseveraldeviceparametersarediscussed,which providesvaluablereferencetothedesignersofstrained—SiGedevices. Keywords:buriedpMOSFET;strainedSiGe;plateau;thresholdvoltage;substratedoping;Gefraction ...
The voltage detector of a gate threshold voltage of each transistor(TR) even in the case of a configuration where a power supply voltage level is detected on the basis of a difference of the gate threshold voltage of PMOS TRs forming differential pairs... 三津江 敏之,野田 真一,藤井 裕志...
of threshold voltage was found to be larger in irradiated PMOS devices.However,if the radiation sensitivity is defined in the way we did it,the results indicated NMOS rather than PMOS devices are more sensitive,especially at low doses.This is important from the standpoint of their possible ...
2) Threshold voltage shift 阈电压漂移 1. The results have shown that the threshold voltage shift following the higher dose-rates irradiation plus anneal can\'t match that obtained at the lower dose-rate for PMOS,so the ionizing radiation response of PMOS isn\'t time dependent effect,but enhan...