FIG. 2 is a graph that generally plots the threshold voltages as a function of channel length. As shown in FIG. 2, when the threshold voltage is optimized for an arbitrary fabricable channel length x, the threshold voltage of a transistor decreases as the channel length of the transistor in...
effect of self-reverse-bias series-connected transistors. However, the transistor impacts the switching speed due to a nonzero voltage drop across the gated-Vdd transistor between the supply rails and the “virtual Gnd” for NMOS gated Vdd (Figure 7.11) or the “virtual Vdd” for PMOS gated-...
wherein the threshold voltage of one of said NMOS transistors is a standard threshold voltage and the threshold voltage of the other NMOS transistor is lower than the standard threshold voltage, and wherein the threshold voltages are made different so as to optimize speed of said CMOS circuit wh...
FIG. 4 illustrates a threshold voltage variation compensation arrangement, embodying an aspect of the invention, for the circuit of FIG. 2; FIG. 5 illustrates a graph useful in explaining the operation of the FIG. 4 circuitry; FIG. 6 is a schematic diagram of a liquid crystal display wi...
NMOS. It has to mention that the first operating elements M2, the first operating elements M3and the second operating elements M4, the second operating elements M5have the first threshold voltage, and the access transistor M1has the second threshold voltage. The first threshold voltage is higher ...
A ramping circuit gradually applies an erasing voltage to a memory cell. Within the ramping circuit an NMOS transistor is disclosed which gradually supplies the erasing voltage to the memory cell in r
one not having an argon implant for reduced PMOS threshold voltage (Vt) mismatch (or an equivalent implant for NMOS). For the purposes of simplicity of illustration, various operations of the fabrication flow, such as masking, etching, deposition, and mask removal have been omitted. The fabricat...
7 shows a graph of flatband voltage (threshold voltage) vs. annealing temperature (° C.). This graph shows that the processing window is determined by the thermodynamic and kinematic boundaries, as shown by the boundary lines. For example, for large Vt shifts: 400° C.<T <500° C. ...
A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Ha
The SOI substrate has been divided by shallow trench isolation (STI) structures 16, for example, formed of SiO2, into a first active region 18 for an nMOS device and a second active region 20 for a pMOS device. The STI structures 16 penetrate through the silicon layer 14 and oxide layer...