semiconductor laser threshold condition and its application to FDTD active cavity modelingMock, Adam
On the sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a magnetic fieldGrado-CaffaroM. A.M.OPTIK -STUTTGART-
We present the first measurements of optical switching power for dispersive bistability in a semiconductor laser as a function of current both below and above threshold. The minimum power for switch-up occurs just below threshold and the minimum power for switch-down occurs slightly above threshold....
In this work, we demonstrate that the mirror loss of a semiconductor laser can be substantially suppressed and the consumption power can be significantly decreased by controlling the optical near-field at the facets via creating a subwavelength metallic hole, leading to a mid-infrared QCL with the...
[IEEE IEEE 14th International Semiconductor Laser Conference - Maui, HI, USA (19-23 Sept. 1994)] Proceedings of IEEE 14th International Semiconductor Laser... The authors experimentally show that every wavelength in an interval of 40 nm can be reached with a side-mode suppression usually better...
1980s, quantum sinking structure so that the semiconductor laser has a big step. With quantum sinking structure of quantum semiconductor lasers with the double sink heterogeneous-semiconductor lasers (DH) compared with a threshold current, low density, quantum effects and temperature characteristics ...
The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.doi:US5666375 AYokouchi, NoriyukiYamanaka, NobumitsuKasukawa, AkihikoUSUS5666375 * 1995年11月8日 1997年9月9日 The Furukawa Electric Co., Ltd. Semiconductor quantum well laser having a low threshold current density...
Semiconductor laser model The L–L curves in Fig.4a, cof the main text were fitted by the conventional semiconductor laser model19,50described below. $$\frac{{dn}}{{dt}} = - \kappa n + \beta \gamma \left( {N - N_T} \right)n + \beta \gamma N,$$ ...
A 3-mm-gapped GaAs photoconductive semiconductor switch is triggered by a 1.6μJ laser diode. Effects of the rectangular spot's layout and the triggering position on the electric field threshold of nonlinear mode are investigated. As the illuminated position moves from the cathode to the anode, ...
Intensity fluctuation between the emission from lasing and non-lasing modes at the threshold in cw GaAs laser were modelled using coupled van der Pol oscillators11. A temperature dependent study of the correlation between the fluctuations of different modes for a semiconductor laser has also been ...