Laser Conditions in Semiconductors. Physica Status Solidi, 1:699-703, January 1961.Bernard, M.G.A.; Duraffourg, B. Laser conditions in semiconductors. Phys. Stat. Sol. 1961, 1, 699-703.M. G. A. Bernard,G. Duraffourg.Laser conditions in semiconductors. Physica Status Solidi . 1961...
The ratio of CL intensities of the EDPHS and sample is experimentally confirmed by taking the CL spectra of the individual components under the same experimental conditions (Fig. 1d). The broadening of the d.c. signal is also acquired by taking the bandwidth of the d.c. peak, which ...
Below that threshold melting occurs on a 100 ps time scale and is of thermal nature. Using a simple numerical model we describe this type of the phase transition as heterogeneous melting under strongly overheated conditions.关键词: intrinsic defects nuclear magnetic resonance LiNbO3 ...
the 4-Pi arrangement35that would consist in interacting with two (or even more) crossing hyper-NA focused pulses at the centre of spheres. This may open new possibilities to achieve warm-dense-matter conditions in semiconductors and the so-called micro-explosion experiments that are today limited...
in electronic components that are more robust and capable of withstanding demanding operational conditions, thereby extending the lifespan of the final products.Another area where Laser treatment of semiconductors technology shows promise is in the enhancement of flexible and wearable electronics. These ...
Institute of Semiconductors Chinese Academy of Sciences, Beijing, China Citations 20,805 h-index 63 Publications 26 Humphrey, Mark G. The Australian National University, Canberra, Australia Citations 13,357 h-index 63 Publications 111 Zhang, Zhiguo Harbin Institute of Technology, Harbin, China Citat...
external optical feedback reflector single mode laser compound cavity laser model hysteresis interference conditions multistable laser nonlinear Fabry Perot resonator/ A4255P Lasing action in semiconductors A4260D Laser resonators and cavities B4320J Semiconductor lasers B4320L Laser resonators and cavities ...
The depth dependence of the change in the complex index of refraction after removal of a series of thin implanted layers has been obtained as a function of ion fluence, flux, and annealing conditions. For high doses, the profiles were found to be in agreement with the damage theory. The ...
recombination, as opposed to carrier trapping, dominates,bapproaches 1. This again agrees with the approximate analytical solution to Eqs.1–3under conditions where bimolecular radiative recombination dominates all other processes. The condition is additionally associated with a maximum in the emission QY...
LIPAA has been extensively studied for microstructures, micro-patterns, and optical devices fabrication on a variety of transparent substrates, including glasses, quartz, and sapphire. Metals and semiconductors, such as copper (Cu)26, silver (Ag)48,49, aluminum (Al)26,50, sapphire powder51, sil...