semiconductor lasers/ gain saturationcurrent-power propertiessemiconductor lasercarrier concentrationlasing/ A4255P Lasing action in semiconductors A4260B Design of specific laser systems B4320J Semiconductor lasersIt is shown that, when temperature effects are excluded, even a small bend of the current-...
PURPOSE:To prevent the breakdown of a semiconductor laser by overcurrents by turning a switch OFF when currents increasing in proportion to the time to the semiconductor laser to be measured exceed a set value. CONSTITUTION:The voltage value of a rheostat 10 is set at some value V1. When sw...
The present paper covers the junction voltage saturation characteristic of the semiconductor lasers and the experimental result about the relation between reliability and junction voltage saturation characteristic in the semiconductor lasers. 本文讨论了半导体激光器的结电压饱和特性,并给出了其可靠性和结电压饱...
Analysis of Leakage Current in Buried Heterostructure Lasers The temperature characteristics of InGaAsP/InP buried heterostructure lasers with p-n-p-n blocking layers have been numerically analyzed using a two-dimens... WATANABE H.,YOSHIDA Y.,SHIBATA K.,... - 《Technical Report of Ieice Ps》 被...
15.Output Characteristics of LD End-pumping Nd∶YVO_4 Laser with Pulse Repetition Rates up to 1 kHzLD端面抽运1KHz电光调Q Nd∶YVO_4激光器输出功率特性研究 16.Investigation of the Output Power Characteristics of Fiber Grating External Cavity Semiconductor Lasers Using the Ray Tracing Method射线法研究...
In this paper, the beam characteristics of semiconductor lasers are studied and their far-field images which are the Fourier transform of near-field images are analyzed and deduced. 研究半导体激光器(LD)的光束特性,并对其远场图像是近场图像的傅里叶变换进行了分析和推导。 更多例句>> 5...
1.To settle the problems that on the condition of high temperature and high power,threshold current of semiconductor lasers will rise,wavelength excursion will occur,radiation efficiency will descend and so on,and we have designed and grown AlInGaAs/AlGaAs strained layer quantum well lasers with hig...
To settle the problems that on the condition of high temperature and high power,threshold current of semiconductor lasers will rise,wavelength excursion will occur,radiation efficiency will descend and so on,and we have designed and grown AlInGaAs/AlGaAs strained layer quantum well lasers with high ...
GaAlAsSb/GaSb is an interesting system for optoelectronic device technology and particularly for the preparation of lasers and photodetectors. The current-voltage characteristic of Ga 0.53Al 0.47As 0.04Sb 0.96 (p)/GaSb(n +) heterojunctions, obtained by liquid phase epitaxy on GaSb substrate, is stu...
美 英 un.特性温度;特征温度;特徵温度;特征性温度 网络特微温度;特征温度量测;特章度 英汉 网络释义 un. 1. 特性温度 2. 特征温度 3. 特徵温度 4. 特征性温度 释义: 全部,特性温度,特征温度,特徵温度,特征性温度,特微温度,特征温度量测,特章度...