The Evolution of DRAM Cell Technology , El Kareh et al, Solid State Technology, May 1997, pp. 89 101.An article titled, " The evolution of DRAM cell technology, " Solid State Technology 89-101 (May 1997), E...
Instead of saving data onto spinning disks, SSDs save that same data to a pool of NAND flash. The NAND (or NOT-AND) technology is made up of floating gate transistors, and unlike the transistor designs used in DRAM (which must be refreshed multiple times per second), NAND is capa...
which drive the adjustment and evolution of risks towards mitigation30,31. According to resource dependence theory, if a country becomes reliant on a particular resource, policy changes and other fluctuations in the resource-supplying country will impact the dependent country...
Figure1maps the evolution of silicon photonics1,2. Silicon-based photonic integrated circuits (PICs) were introduced in 19853and low-loss waveguides in a thick silicon on insulator (SOI) process demonstrated in 1991–924,5. Various optical devices were next demonstrated6, and soon, silicon photoni...
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From the ability to support camera technology in the earliest cell phones to the introduction of tablets, thin and light laptops, and wearables, solid-state storage technology has been a key enabler in the evolution of technology. Without the ability to store applications and data, the evo...
May 4, 2023 -- NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced the launch of its ground-breaking technology, 3D X-DRAM™. This development is the world’s first 3D NAND-like DRAM cell array that is targeted to solve DRA...
DRAM technology offers the highest density random access memory due to a simple 1T1C structure consisting of a single access transistor and a single storage capacitor. Typical 90nm embedded DRAM processes offer cell sizes in the range of 0.2m2. In contrast, 90nm SRAM cells typically occup...
A capacitor is arranged under a transistor such that the DRAM cell is suitable for high-density semiconductor devices. The semiconductor device according to the present invention comprises: a buried capacitor which consists of a storage electrode, a dielectric layer and a plate electrode, and which...
It’s a fascinating technology, since it harnesses exotic steps invented by DRAM makers in the 1990s to get over scaling problems in that technology. At the time DRAM had to go vertical to follow Moore’s Law and there were two schools of vertical DRAM: Stacked Capacitor, and Trench Cell....