Memory cell array vertically has the plural strip semiconductor regions which orientation are done, here, the source drain territory is filled top and in lower part, the channel territory which was imbedded on all sides of the insulating material exists at these time as a floating body.ヴィラ...
Article Open access 18 June 2024 One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors Article Open access 09 September 2021 Introduction The RRAM implemented in crosspoint array structure promises high scalability and 3D architecture. A RRAM ce...
worst case for usual crosspoint array is when the read cell is at HRS while all other cells are at LRS or vice versa1–6. To address the sneak path issue, the RRAM devices (1 R) were proposed in series with a diode (1D1R), a transistor (1T1R) and a selector (1S1R)1–4....
Similar to the history of the single-transistor DRAM cell, this one-transistor pixel cell has one main advantage over the APS. It has high fill-factor... IL Fujimori,CC Wang,CG Sodini - IEEE International Solid-state Circuits Conference 被引量: 20发表: 0年 Evaluation of a single-pixel ...
Two-Transistor Floating-Body Dynamic Memory Cell Embodiments relate to a two-transistor (2T) floating-body cell (FBC) for embedded-DRAM applications. Further embodiments pertain to a floating-body/gate cell (FBGC), which yields reduction in power dissipation, in addition to better sign... JG ...
aMethod for controlling a DRAM memory cell of a FET transistor on a semiconductor-on-insulator substrate. 方法为控制一支FET晶体管的微量存储单元在半导体在绝缘体基体。 [translate] acnter cnter [translate] ato remove the child from the country 从国家去除孩子 [translate] aTRUST NE I WILL NOT DO ...
aDRAM memory cell controlling method for FET transistor on semiconductor-on-insulator substrate, involves operating front and back control gates by applying voltage to front control gate and positive voltage to back control gate 微量存储单元控制方法为FET晶体管在半导体在绝缘体基体,介入操作前面和后面控制...
A one-transistor type DRAM comprises a floating body storage element configured to store data in a floating body in a SOI wafer, a plurality of access transistors each connected bet
A Novel Two-Transistor Floating-Body/Gate Cell for Low-Power Nanoscale Embedded DRAM A novel two-transistor (2T) floating-body cell (FBC) for embedded-DRAM applications is proposed and demonstrated via device/circuit simulations using a pro... Z Lu,JG Fossum,W Zhang,... - 《IEEE Transaction...
One aspect of the present subject matter relates to a memory cell, or more specifically, to a one-transistor SOI non-volatile memory cell. In various embodiments, the mem