25 May 2016 Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric Zhi-Peng Ling1, Jun-Tao Zhu1, Xinke Liu2 & Kah-Wee Ang1 Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits st...
Black Phosphorus: Tuning the Optical and Electrical Properties of Few‐Layer Black Phosphorus via Physisorption of Small Solvent Molecules (Small 47/2019)black phosphoruscharge transferdopingfield‐effect transistorRaman spectroscopysolventsdoi:10.1002/smll.201970252...
We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In semiconducting state at 0.29 GPa, the remarkable non-linear behavior in the Hal... K Akiba,A Miyake,Y Akahama,... 被引量: 0发...
The team opted for black phosphorus. ‘The honeycomb structure of black phosophorus is regularly puckered. This makes it highly susceptible to external perturbations such as strain and electric field. We deposited potassium atoms on the surface of black phosphorus to induce a strong electric field ...
In summary, phonons of black phosphorus generate aκijlarger than what was reported in any other insulator. The ratio ofκijtoκjjin this system is comparable to other insulators and in all cases, the longitudinal and transverse thermal conductivities peak at the same temperature where the phonon...
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Sustainable crop production could contribute to feed and fuel for the ever-increasing global population. The use of heavy agricultural machinery has improv
Large-scale growth of few-layer two-dimensional black phosphorus. Nat. Mater. 20, 1203–1209 (2021). This study demonstrates the large-scale growth of P-type 2DMs. Article Google Scholar Sui, Y. et al. Recent advances in black-phosphorus-based materials for electrochemical energy storage. ...
Recently, SnO has attracted more and more attention, because it is a bipolar electronic material holding great potential in the design of p-n junction. In this paper, we examine the effect of extrinsic point defects on modifying the electronic and magnetic properties of SnO using density function...