Electrical properties of phosphorus-doped polycrystalline silicon films contaminated with oxygenExperimental/ carrier densitycarrier mobilityelectronic conduction in crystalline semiconductor thin filmselemental semiconductorsoxygenphosphorussegregationsilicon/ Si:P,O...
Electrical properties of phosphorus (P)-related donors have been investigated for P-doped homoepitaxial diamond layers grown by microwave plasma CVD. Temperature-dependent current-voltage (I-V), capacitance-voltage (C-V) measurements and frequency-dependent C-V measurements have been carried out with...
Effect of Annealing Temperature on the Structural and Optical Properties and Effect of Thickness on the Electrical Properties of Phosphorus Doped CdTe. J Inorg Organomet Polym 26, 147–153 (2016). https://doi.org/10.1007/s10904-015-0294-2 Download citation Received19 August 2015 Accepted06 ...
We fabricated diamond lateral pn junction diodes by selective growth of n+-type diamond and evaluated their structural and electrical properties. The phosphorus-doped n+ diamond was selectively grown by microwave chemical vapor deposition at the side of a boron-doped p-type layer to form lateral ...
PI and PII-derivatives have been investigated by electrical and electrooptical methods for the determination of the main parameters of multiple phosphorus bonds, polarity and polarizability, and on their basis spatial and electronic structure of these compounds has been studied. Experimental data on ...
The electrical properties and structure were studied for P+Si-implanted silicon. The silicon samples were implanted with high energies of 0.5–3.9 MeV P + to obtain different thicknesses of the implanted layer. The dose range is from 6×10 12 to 1×10 16 cm 2 . Then the silicon ions ex...
Nuclear spins of phosphorus [P] donor atoms in crystalline silicon are among the most coherent qubits found in nature. For their utilization in scalable quantum computers, distinct donor electron wavefunctions must be controlled and probed through electrical coupling by application of either highly loca...
The electrical properties of excimer-laser-crystallized lightly phosphorus-doped polycrystalline silicon films were investigated. The electrical conductivity of the films increased from 6.0×10^<-7> to 2.3×10^<-1> S/cm as the laser energy density increased from 235 to 436 mJ/cm^2 because the ...
Black phosphorus (BP) is a layered semiconductor that recently has been the subject of intense research due to its novel electrical and optical properties, which compare favorably to those of graphene and the transition metal dichalcogen... A Autere,CR Ryder,A S?Yn?Tjoki,... - 《Journal ...
The electrical properties of the implanted samples are analyzed by considering that some of the carriers photo-generated in the implanted layer diffuse into the undamaged part of the sample in which they assume the measured very high mobility. A two layer model is used to analyze the ...