Electrical properties of phosphorus-doped polycrystalline silicon films contaminated with oxygenExperimental/ carrier densitycarrier mobilityelectronic conduction in crystalline semiconductor thin filmselemental semiconductorsoxygenphosphorussegregationsilicon/ Si:P,O...
Electrical properties of phosphorus (P)-related donors have been investigated for P-doped homoepitaxial diamond layers grown by microwave plasma CVD. Temperature-dependent current-voltage (I-V), capacitance-voltage (C-V) measurements and frequency-dependent C-V measurements have been carried out with...
We fabricated diamond lateral pn junction diodes by selective growth of n+-type diamond and evaluated their structural and electrical properties. The phosphorus-doped n+ diamond was selectively grown by microwave chemical vapor deposition at the side of a boron-doped p-type layer to form lateral ...
PI and PII-derivatives have been investigated by electrical and electrooptical methods for the determination of the main parameters of multiple phosphorus bonds, polarity and polarizability, and on their basis spatial and electronic structure of these compounds has been studied. Experimental data on ...
Nuclear spins of phosphorus [P] donor atoms in crystalline silicon are among the most coherent qubits found in nature. For their utilization in scalable quantum computers, distinct donor electron wavefunctions must be controlled and probed through electrical coupling by application of either highly loca...
Semi-metals present unique transport properties due to their distinctive band structures and topological properties, leading to an emergence of semi-metal-based electronic applications. Specifically, these properties include intrinsic low density of states at the Fermi level, the linear dispersion electronic...
Influence of Some New Aminophosphonates on Electrical Properties and Stability of Plasma Membranes of Plant Cells[J].Acta Societatis Botanicorum Poloniae,2002,(03):223-226.Sarapuk J., Bielecki K., Trela Z., 2002. Influence of some new aminophosphonates on electrical properties and stability ...
The effect of post-annealing treatment upon the electrical and optical properties of phosphorus-doped ZnTe homoepitaxial layers grown by metalorganic vapou
of electrical conductivity indicates that the sample behaves as a semiconductor material at relatively high frequencies. The spectra of the measured electrical properties vary strongly with the change of the concentration of the conductive elements and the texture of the specimens. The main change of ...
The low temperature growth process induces a strong phosphorus stoichiometry deviation (>1%). Annealing experiments lead to the formation of phosphorus precipitates in the layers. Intentionally beryllium-doped InP layers exhibit a relatively high resistivity of 10 惟 cm after post-annealing....