Silicon nitride--TEOS oxide, salicide blocking layer for deep sub-micron devicesUS6025267 1998年7月15日 2000年2月15日 Chartered Semiconductor Manufacturing, Ltd. Silicon nitride--TEOS oxide, salicide blocking layer for deep sub-micron devices
The bond strength of plasma-enhanced tetraethyl-orthosilicate (PE-TEOS) oxide, bonded and annealed at low temperatures (300°C and below), is enhanced using a thin layer of high-κ dielectric at the bonding interface. Before bonding, various thin ( ~5 nm) capping layers of high-κ dielectri...
A method for the planarization of a semiconductor wafer (10) in an integrated circuit, wherein the semiconductor wafer (10) at least two regions with different structure densities, wherein a first region of a structures of concentration with a first height (122 - 1) above the surface of the...
A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakd... CH Kao,SL Chao - 《IEEE Electron Device Letters》 被引量: 29发表: 1997年 RF power effect on TEOS/O2 PECVD of silicon oxide thin...
With a construction wherein an interlayer insulating film of a semiconductor device is comprised of a TEOS oxide film formed by means of the plasma CVD method as an underlayer of the interlayer insulating film, and a TEOS oxide film formed by means of the CVD method as an upper layer of ...
PROBLEM TO BE SOLVED: To adjust the accurate concentration of ozone and to enhance the flatness of a TEOS-O3 oxide film layer by a method wherein the amount of gas for concentration adjustment use for adjusting the concentration of the O3 in O2 +O3 , which is fed from an ozone generating...
规格或纯度封装用于沉积系统 英文名称Tetraethyl orthosilicate 产品介绍 应用 Tetraethyl orthosilicate (TEOS) is an oxygen containing precursor of Si used for the deposition of: Si oxide Oxycarbide Doped silicate Silanol Siloxane polymer Organosilicon thin films The films can be deposited at low temperatues...
A smart PIC technology with the reproducible tapered TEOS oxide has been proposed to reduce the fabrication process steps and obtain p-LDMOS with low on-resistance. Several process steps could be reduced, compared to the conventional process. With a similar breakdown voltage (5% reduction), the ...
This paper reports residual stress measurements and fracture analysis in thick tetraethylorthosilicate (TEOS) and silane-based plasma enhanced chemical vapor deposition (PECVD) oxide films. The measured residual stress depended strongly on thermal process parameters; dissolved hydrogen gases played an importa...
A method for forming a silicon oxide dielectric layer within a microelectronics fabrication. There is first provided a silicon substrate layer employed within a microelectronics fabrication. There is then formed employing the silicon substrate a thermal silicon oxide layer through thermal oxidation of the...