tensile-strained 例句 释义: 全部 更多例句筛选 1. Deformation structure and recrystallization behaviour of tensile strained copper 多晶铜形变显微组织及其再结晶行为 www.ilib.cn 2. Characteristics of tensile strained pure copper microstructure 拉伸变形纯铜的显微组织特征 service.ilib.cn隐私...
Direct bandgap silicon: tensile-strained silicon nanocrystals. Adv Mater Inter 2014; 1: 1300042.Kusova,́ K.; Hapala, P.; Valenta, J.; Jelinek, P.; Cibulka, O.; Ondic,̌ L.; Pelant, I. Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals. Adv. Mater. Interfaces 2014, 1...
Tensile-strained GaAsP/GaInAsP/GaInP separate-confinement-heterostructure single-quantum-well (SCH-SQW) lasers are reported for the first time. A low threshold current density of 261 A/cm/sup 2/ and a high characteristic temperature of 1... M Pessa,H Asonen - Euro III-Vs Review 被引量: ...
半导体器件物理学-许军ieee-tensile-strainedgeandge-sn 系统标签: strainedtensile半导体器件许军物理学layers Tensile-StrainedGeandGe 1-x Sn x Layers forHigh-MobilityChannelsinFutureCMOSDevices ShigeakiZaima 1, *,OsamuNakatsuka 1 ,YosukeShimura 1,2 ,andShotaroTakeuchi 1† 1 DepartmentofCrystallineMateria...
We demonstrate the combination of germanium microdisks tensily strained by silicon nitride layers and circular Bragg reflectors. The microdisks with suspended lateral Bragg reflectors form a cavity with quality factors up to 2000 around 2μm. This represents a key feature to achieve a microlaser ...
Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not ob...
The transistor structures may be used for either or both of n-type and p-type transistor devices, as tensile-strained Ge has very high carrier mobility properties suitable for both types. Thus, a simplified CMOS integration scheme may be achieved by forming n-MOS and p-MOS devices included ...
This paper proposes a In0.5Al0.5As/InxGa1-xAs/In0.5Al0.5As (x = 0.3 - 0.5 - 0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance...
100 /spl mu/m-stripe lasers with a tensile-strained GaAs/sub y/P/sub 1-y/ quantum well embedded in a low-loss AlGaAs large-optical-cavity structure provide a record-high CW power of 7 W at 735 nm from 2 mm-long devices. The transverse beam pattern has a narrow 25/spl deg/ beamwi...
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor...