strained relationship：紧张的关系，指人与人之间因各种原因而产生的紧张或不和。strain at something：使...
tensile-strained 例句 释义: 全部 更多例句筛选 1. Deformation structure and recrystallization behaviour of tensile strained copper 多晶铜形变显微组织及其再结晶行为 www.ilib.cn 2. Characteristics of tensile strained pure copper microstructure 拉伸变形纯铜的显微组织特征 service.ilib.cn隐私...
A tensile strained silicon layer and a compressively strained silicon germanium layer are formed on a strain relaxed silicon germanium buffer layer substrate. A relaxed silicon layer is formed on the substrate and the compressively strained silicon germanium layer is formed on the relaxed silicon ...
Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not ob...
Tensile strained germanium nanowires: towards a direct bandgap! and "Operando")聽INAC/SP2M/SiNaPS and INAC/SP2M/NRS聽Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction... V Calvo 被引量: 0发表: 0年 Measurement of the band gap of GexSi1x/Si...
1) Tensile strained GaAs la 张应变GaAs层 2) highly strained In_ 0.45Ga_ 0.55As/GaAs quantum well 高应变In0.45Ga0.55As/GaAs量子阱 3) strain tensor 应变张量 1. A note on the accurate expression ofstrain tensor; 关于壳体有限变形的准确应变张量表达式的一点注记 ...
In a typical tensile test a specimen having a small, uniform cross-section is strained until failure. The deformation (increase in length) and applied load are continuously measured during the whole experiment. The applied engineering stress σ is defined by the load F divided by the initial ...
《半导体器件物理学-许军》ieee-tensile-strained ge and ge-sn 文档格式: .pdf 文档大小: 338.93K 文档页数: 4页 顶/踩数: 0/0 收藏人数: 0 评论次数: 0 文档热度: 文档分类: 高等教育--大学课件 文档标签: 半导体器件物理学-许军ieee-tensile-strainedgeandge-sn ...
This paper proposes a In0.5Al0.5As/InxGa1-xAs/In0.5Al0.5As (x = 0.3 - 0.5 - 0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance...
3) compressively strained InGaAs quantum wells 压应变InGaAs量子阱4) InGaAs/GaAs strained quantum well InGaAs应变量子阱5) InGaAs graded component layer InGaAs渐变层6) strain tensor 应变张量 1. A note on the accurate expression of strain tensor; 关于壳体有限变形的准确应变张量表达式的一点注记...