如上图所示,传统减薄工艺将晶圆(Wafer)整体减薄,导致晶圆(Wafer)整体结构变得非常脆弱,在生产过程中极易碎,且翘曲过大,不利于后续制造。而Taiko工艺使整个晶圆(Wafer)具有更高的机械强度,完美解决了这一问题。e、能减薄到最小厚度;下图为8寸晶圆(Wafer)50um厚度的效果,同时,Taiko工艺对于12寸晶圆(Wafer)的减薄,一...
TAIKO is a DISCO developed wafer back grinding method. By enabling an outer support ring to the wafer (the TAIKO ring, Japanese for drum), back grinding is performed on the inner circular area of the wafer, while leaving an edge of a few millimeters unprocessed. Taiko simplifies thin wafer ...
Taiko工艺是一种晶圆减薄技术,它是新世代封装新技术中使用的晶片背面研磨的名称。这项技术和以往的背面研磨不同,在对晶圆(Wafer)进行研磨时,將保留晶圆(Wafer)外围的边緣Ring部分(约3mm左右),只对晶圆(Wafer)内进行研磨薄型化。通过导入这项技术,可实现降低薄型晶圆(Wafer)的搬运风险和減少翘曲的问题➡️ O网...
TAIKO製程更有效將Wafer薄化到100um以下的厚度,再進行後製加工 目前產業界TAIKO穩定製成的標竿為(聯華電子 UMC)量產厚度在75um左右,此製成還在進步中,未來可期待在25um~50um也可達成穩定量產技術。
This equipment is full-auto type Tape remover, removes protection tape (for back-grinding process) from TAIKO wafer patterned surface .
taiko工艺&wafer去环工艺流程介绍 taiko工艺&wafer去环工艺流程介绍 1 GeneralTaikoProcesswithMounter/RR 2 GrindingWheelandGrindingPositionsideView 3
12英寸。晶圆，多指单晶硅圆片，由普通硅沙拉制提炼而成，是最常用的半导体材料，按其直径分为4英寸、5英寸、6英寸、8英寸等规格，近来发展出12英寸甚至更大规格。晶圆越大，同一圆片上可生产的IC就多，可降低成本，但要求材料技术和生产技术更高。
During the backside grinding (BG) of wafer thinning process, fast and precise grind wafers with grinding wheel before micro etching their surfaces with etching solution to remove the damaged layers due to grinding and stress release. New Challenge in 1.5 Mil Taiko Wafer with High Wafer Strength ...
TAIKO製程更有效將Wafer薄化到100um以下的厚度，再進行後製加工 目前產業界TAIKO穩定製成的標竿為(聯華...