www.dictall.com|基于7个网页 2. 次临界区 5-3-2次临界区(Sub-threshold Region) 435-3-3 开关电流比(Ion/Ioff)435-3-4 载子移动率(Mobility)445-4 玻璃基板上奈米复晶 … etdncku.lib.ncku.edu.tw|基于2个网页
1) sub-threshold region 亚阈值区1. It is based on the gate-source voltage of an NMOS operating in sub-threshold region and a PTAT voltage produced by the weighted difference of the gate source voltage of two different NMOSs. 本文利用工作在亚阈值区的NMOS管的栅源电压,结合由两个栅源电压...
1.It is based on the gate-source voltage of an NMOS operating in sub-threshold region and a PTAT voltage produced by the weighted difference of the gate source voltage of two different NMOSs.本文利用工作在亚阈值区的NMOS管的栅源电压,结合由两个栅源电压之差产生的一个PTAT(与绝对温度成正比)电...
It becomes very challenging and tedious task to operate a SRAM cell in sub-threshold region. So, as to overcome this challenge a novel design of SRAM has been proposed in this work using memristors. This design not only provides better write stability but also consumes lesser power. In this...
Solid-State Electron 2010;54:1003-9.D. Tsamados, N.V. Cvetkovic, K. Sidler, J. Bhandari, V. Savu, J. Brugger, A.M. Ionescu, Double-gate pentacene thin-film transistor with improved control in sub-threshold region, Solid-State Electronics 54 (2010) 1003-1009....
For a low-power consumption, the synaptic TFT is operated in the sub-threshold region with a read voltage less than the threshold voltage. In the fabricated TFT, a defective SiO2 is used as the gate oxide while an amorphous In-Ga-Zn–O (IGZO) is employed as the channel layer. Here, ...
A low power bandgap reference with buffer working in the sub-threshold region for energy harvesting systems一种应用于能量攫取系统的低功耗的工作于亚阈值区域... A low power bandgap reference with buffer working in the sub-threshold region for energy harvesting systems一种应用于能量攫取系统的低功耗的...
The performance of Static Random Access Memory reduces drastically in terms of access energy and leakage power when it is operated in sub-threshold region. But, as the technology is advancing toward miniaturization it becomes important that the device should perform efficiently in sub-threshold region...
This paper examines the usefulness of N-curve metrics for a 65 nm SRAM cell operating in sub-threshold region. Various N-curve metrics are evaluated with changing power supply voltage, temperature, cell ratios, pull up ratios and oxide thickness. N-curve metrics are also evaluated considering th...
网络次临界斜率;亚阈值斜率 网络释义