First principle study of band gap nature, spontaneous polarization, hyperfine field and electric field gradient of desirable multiferroic bismuth ferrite (BiFeO3)Electronic band structure, spontaneous polarization, hyperfine fields and electric field gradients (EFG) of the desirable multiferroic BiFeO3 (BFO)...
The band‐gap alignment of InAs1xPx/In0.53Ga0.47As1yPystrained heterostructures fabricated by selective As–P interdiffusion in an as‐grown InP/In0.53Ga0.47As superlattice has been investigated using low‐temperature photoluminescence. Interdiffusion is performed using thermal anneals with phosphorous gas...
Using the ab initio plane-wave ultrasoft pseudopotential method based on generalized gradient approximation (GGA), we investigated the band-gap tuning in m
In this paper, the phenomenon of band gap transmission in high temperature plasma is studied. Cold plasma has high pass property, so the low-frequency electromagnetic wave cannot penetrate plasma and propagate in it. Simulation results show that in high temperature plasma, a transmission peak will...
Direct wide band gap material: a Hartree–Fock study of α-Be3N2 MGM Armanta,A Reyes-Serrato 被引量: 0发表: 2001年 Direct wide band gap material: a Hartree-Fock study of a-Be3N2 GM Armanta,M.,Reyes-Serrato,... - 《Computational Materialsence》 被引量: 2发表: 2001年 Hartree-...
13. One of our motivations was to find out whether some of the LIS of Er lie within the band gap of SL WS2. We were able to show that this is indeed the case. The reason for our motivation is that LIS inside the band gap of a semiconductor can be potentially used as a qubit or...
InGaN (InGaN) and ZnBeO (ZnBeO) are compound semiconductor solid solutions that display a wide band gap tuning range and strong spontaneous and piezoelectric polarizations due to the wurtzite crystal structure. They have gained significant importance in electronic and optoelectronic devices where the ...
Although world leading researchers have tried to add boron into graphitic framework to open its band-gap for semiconductor applications, there has not been any notable success yet. Since the atomic size of boron (85 pm) is larger than that of carbon (77 pm), it is difficult to accommodate ...
The theoretical analysis and the experimental verification show that both types of the periodic structures can behave as electromagnetic band gap (EBG) structures, right-handed structures (RHS), and left-handed structures (LHS), when they operate at different frequency ranges. Thus, the possibility ...
Duan, ”Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study,” European Physical Journal B, Vol. 66, pp. 439, 2008. :H. L. Shi and Y. Duan, Band-Gap Bowing and P-Type Doping of (Zn, Mg, Be)O Wide- Gap Semiconductor ...